Semiconductor device, and method and apparatus for manufacturing semiconductor device

ABSTRACT

A high frequency power amplifying device has two amplifying lines. Each amplifying line has a configuration in which a plurality of amplifying stages are connected in cascade having two source voltage terminals, of which one is connected to the first amplifying stage of one amplifying line and to the remaining amplifying stages of the other amplifying line, and the other, to the first amplifying stage of the latter amplifying line and to the remaining amplifying stages of the former amplifying line. An air core coil with a low D.C. resistance, formed by spirally winding a copper wire of about 0.1 mm in diameter, is connected in series between the final amplifying stage of each amplifying line and the source voltage terminal. Since there is no signal leak in each amplifying line from the final amplifying stage to the first amplifying stage and the D.C. resistance of the air core coil is low, oscillation margin can be improved. The air core coil is inexpensive, and accordingly can contribute to the cost reduction of the high frequency power amplifying device. Air core coils are fed by a bulk feeder and mounted over a module substrate.

TECHNICAL FIELD

[0001] The present invention relates to a semiconductor device, amanufacturing method therefor and a semiconductor manufacturingapparatus, and more particularly, for instance, to a manufacturingtechnique for a multi-stage high frequency power amplifying device (highfrequency power amplifying module) in which a plurality of amplifiers(semiconductor amplifying elements) are connected in cascade in multiplestages as a semiconductor device, and a technique that can beeffectively applied to a wireless communication device (electronicdevice) into which the high frequency power amplifying device isincorporated, such as a mobile telephone.

BACKGROUND ART

[0002] A high frequency power amplifying device for use in wirelesscommunication devices, such as car telephones or mobile telephones, hasa multi-stage configuration in which a plurality of amplifiers, eachconsisting of a semiconductor amplifying element (transistor), areconnected in cascade in two, three or more stages. The amplifier of thefinal stage (final amplifying stage) of the multi-stage configurationconstitutes the output stage, and the amplifiers of the preceding stages(amplifying stages) constitute drive stages. In addition, inductors areincorporated in a number of positions to regulate circuit impedance.

[0003] Required performance characteristics of high frequency poweramplifying devices include high efficiency, high gain, compactness andlow cost. In addition, portable devices in particular requireconsideration for the resistance of amplifying element of the finalstage (semiconductor amplifying element) against a high voltage that maywork on it as a result of reflection that would result from asubstantial variation in the impedance of the antenna and consequentload mismatching.

[0004]FIG. 33 is a block diagram of the circuit configuration of a highfrequency power amplifying device studied by the present inventorsbefore their attempt at the present invention. This high frequency poweramplifying device is a dual band device capable of amplification for twocommunication systems, including the Global System for MobileCommunication (GSM) and the Digital Cellular System (DCS).

[0005] This high frequency power amplifying device 1 has as its externalelectrode terminals a GSM input terminal (Pin GSM {circle over (1)}), acontrol terminal (Vapc {circle over (2)}), one source voltage terminalof a source voltage Vdd (Ydd1 {circle over (3)}), a GSM output terminal(Pout GSM {circle over (4)}), a DCS output terminal (Pout DCS{circleover (5)}), the other source voltage terminal of the source voltage Vdd(Vdd-2 {circle over (6)}), a communication band switching terminal (Vct1{circle over (7)}), a DCS input terminal (Pin DCS {circle over (8)}) anda ground voltage terminal (GND) (not shown).

[0006] The amplifying lines of both DCS and GSM are configured in threeamplifying stages. The DCS amplifying line consists of amplifying stagesdenoted by 1st, 2nd and 3rd in the diagram (amp1, amp2 and amp3), whilethe GSM amplifying line consists of amplifying stages similarly denotedby 1st, 2nd and 3rd (amp4, amp5 and amp6). Each amplifying stageconsists of a field effect transistor (FET) though not shown.

[0007] In this configuration, Pin DCS {circle over (8)} is connected toamp1; Pout DCS {circle over (5)}, to amp3; Pin GSM {circle over (1)}, toamp4 and Pout GSM {circle over (4)}, to amp6.

[0008] Vapc {circle over (2)} is connected to a bias circuit 2, and amp1through amp6 are controlled with signals inputted to this Vapc {circleover (2)}.

[0009] Vdd1 {circle over (1)} is connected to amp4 via a microstrip lineMS3, to amp5 via a microstrip line MS4 and to amp6 via an inductor L2.Further to stabilize the high frequency performance, a capacitance C1,of which one end is grounded through GND, is externally connected toVdd1 {circle over (3)}.

[0010] Vdd2 {circle over (6)} is connected to amp1 via a microstrip lineMS1, to amp2 via a microstrip line MS2 and to amp3 via an inductor L1.Further to stabilize the high frequency performance, a capacitance C2,of which one end is grounded through GND, is externally connected toVdd2 {circle over (6)}.

[0011] Vct1 {circle over (7)} is connected to a band select circuit 3.This band select circuit 3 is composed of three n-channel type fieldeffect transistors (FET) Q8, Q9 and Q10, whose sources are grounded, andone resistor R1. The gate terminal of Q8 and Q9 are connected to Vct1{circle over (7)}. The gate terminal of Q10 is connected to the drainterminal of Q9, which is connected to the output side of amp5 via aresistor R2. The drain terminal of Q9 is connected to Vdd2 {circle over(6)} via the resistor R1. The drain terminal of Q8 is connected to theinput side of amp3 via an inductor L3.

[0012] Band switching is accomplished with a signal supplied to Vct1{circle over (7)} to carry out amplification for DCS communication orfor GSM communication.

[0013] In the circuitry shown in FIG. 33, a common power supply line isused by the GSM circuit chain and the DCS circuit chain. It has beenfound that, as a result of this, there is formed a feedback loop(indicated by bold arrows in FIG. 33) for leak signals from the 3rd FETto return to the 1st FET, inviting susceptibility to oscillation.

[0014] On the other hand, the inductors used according to the prior artare chip inductors. However, chip inductors have high DC resistances andaccordingly constitute restraints on output and efficiency in highfrequency power amplifying devices (high frequency power amplifiermodules) for mobile telephones. Thus, chip inductors require a currentcapacity of 2 A or more when they are to be used on the power supplyline of a high frequency power amplifying device, and therefore have tobe produced to a special specification, which means a correspondinglyhigh price and difficulty of urgent procurement.

[0015] Commercially available air core coils are too large in externaldimensions to be mounted on a module which has a prescribed heightlimit. Thus, chip-shaped electronic parts such as chip resistors andchip capacitors incorporated into high frequency power amplifyingdevices are commonly known as “1005” products, measuring 1 mm in lengthand 0.5 mm in width, smaller than commercially available air core coils.

[0016] Moreover, conventional chip inductors are expensive, and theirhigh prices constitute a constraint to cost reduction of hybridintegrated circuit devices. Whereas chip inductors are diverse instructure, the mainstream structures of those used in high frequencypower amplifying devices comprise one consisting of a wire wound arounda ceramic base member, a spiral one formed by stacking conductors, suchas Ag and Ni over a ceramic base and another produced by plating thesurface of a ceramic core to form a metal layer and spirally cuttingthis metal layer with a laser beam.

[0017] In view of these circumstances, the present applicants studied,with a view to reducing the size and cost and weakening the DCresistance, a coil formed by spirally winding a highly conductive metalwire, and proposed a new type of coil (coil inductor) (Japanese PatentApplication No. 2000-367762).

[0018] This type of coil, to cite an example, has a structure consistingof a copper wire of 0.1 mm in diameter, whose surface is covered with aninsulating film (e.g., polyethylene film), is spirally wound into ashape measuring 0.56 mm in outer diameter and 0.9 mm in length, bothapproximately. Before spirally winding the coil, the insulating film atboth end portions of the copper wire is removed to a fixed length each,or these parts are covered with no insulating film from the outset.Therefore, one or more rounds of the coil not covered by the insulatingfilm serve as electrodes. This coil is very light, weighing only about0.0725 mg. Since this air core coil proposed by the present applicantsis manufactured by winding a copper wire, the air coil of 8 nH ininductance has a D.C. resistance of about 20 mΩ, much lower than the 100mΩ D.C. resistance of a conventional chip inductor of 8 nH (forinstance, a “1005” product structured by spirally cutting a small metallayer with a laser beam).

[0019] The air core coil proposed here of 8 nH in inductance is 20 mΩ inD.C. resistance, or ⅕ of that of the conventional inductor, with acorresponding cost advantage.

[0020] Applicants, intending to incorporate this air core coil into ahigh frequency power amplifying device, which also is a hybridintegrated circuit device, attempted assembly using a conventional bulkfeeder.

[0021] However, the applicants have found that it is difficult to stablysupply such extremely light coils (air core coils) with the conventionalbulk feeder.

[0022] An example of bulk feeder, which also is a semiconductormanufacturing apparatus, is disclosed in Matsushita Technical Journal,Vol. 45, No. 4, August 1999, pp. 86-90. This literature describes ahopper type bulk feeder suitable for packaging of surface-mountableelectronic parts such as laminated chip capacitors and thick film chipresistors.

[0023]FIG. 34 through FIG. 42 illustrate a conventional bulk feeder. Asshown in FIG. 34, the conventional bulk feeder has a bulk accommodatingcase 10 for accommodating bulk, a hopper 11 arranged underneath thisbulk accommodating case 10, and a conveyor rail 13 for guiding the bulkaccepted through the hopper 11 toward a bulk feed section 12 at the tip.

[0024] The bulk accommodating case 10 is structured as a thin box, whoseinner bottom constitutes slopes 14 for gathering the bulk from bothsides toward the center. The hopper 11, arranged to pierce the center ofthese slopes 14 and to take out the bulk gathered on the inner bottomparts of the slopes 14 from the bulk accommodating case 10 in an alignedstate is configured of a guide 16 having a frustum concave 15 at theupper end, and a feed shaft 18 consisting of an angular pipe and havinga guide hole 17 for guiding one component at a time of the bulk throughthis guide 16 along the center axis, as shown in FIG. 35. The guide 16is structured to oscillate up and down so that the bulk enter the guidehole 17 from the upper end of the feed shaft 18. It oscillates in anamplitude of, for instance, about three times the length of the bulk(one stroke: abbreviated to 1 St).

[0025] The guide hole 17 has a rectangular section as shown in FIG. 36.The feed shaft 18 measures 2.6 mm in diameter, and has at its center therectangular guide hole 17 of 0.63 mm in width and 0.87 mm in length.

[0026] It was found that, when coils (air core coils) 9 each measuring0.56 mm×0.85 mm were fed in bulk with such a bulk feeder, a number offeed faults would arise as shown in FIG. 35 and FIG. 36.

[0027] One is a feed fault A in which the air core coil 9 rides on theupper end of the feed shaft 18 on account of the wall thickness of thecylindrical feed shaft 18 and therefore fails to enter the guide hole17.

[0028] Another is a feed fault B in which a gap 19 occurs between theslope of the frustum concave 15 and the outer circumference of the feedshaft 18 when the guide 16 has come down, and the air core coil 9 iscaught in this gap 19.

[0029] Still another is a feed fault C in which the air core coil 9measuring 0.53 mm×0.85 mm, because it has some dimensional fluctuations,is toppled sideways and caught on the way of the guide hole 17 measuring0.63 mm×0.87 mm.

[0030] Also, as the conveyor rail 13 of the conventional bulk feeder hasa seam D as shown in FIG. 34, the air core coil 9 may be caught by thatseam and invite a feed fault.

[0031] On the other hand, the bulk feed section 12 is structured asshown in FIG. 37, and acts as illustrated in FIG. 37 through FIG. 42.Thus, as shown in FIG. 37, toward the tip of the conveyor rail 13, theupper side of the tip of the conveyor rail body 25 is a step lower, anda slider 26 is fitted to this lower portion to be able to reciprocatealong the shifting direction of the air core coil 9.

[0032] A rail 27 provided with the guide hole 17 to guide the air corecoil 9 extends to the stepped portion of the conveyor rail body 25. Theconveyor rail body 25 has a stopper portion 28 for stopping the forwardend of the air core coil 9 having entered the guide hole 17 of the rail27 and moved on. This stopper portion 28 is in contact with the upperside of the air core coil 9, and its lower portion is a partially openspace. This constitutes a vacuum suction passage 30 a for subjecting theair core coil 9 to vacuum suction to bring it into contact with thestopper portion 28.

[0033] The slider 26 is brought into contact on its left end face with aside of the stepped portion by a spring 29. The state in which the leftend face of the slider 26 is in contact with the side of the steppedportion constitutes the position of the stopper portion 28 to positionthe air core coil 9, i.e. its positioning reference face.

[0034] A shutter 31 overlaps the slider 26, and is shiftable relative tothe slider 26. The shutter 31 reciprocates in the shifting direction ofair core coils 9, and spans a slightly longer range than the length ofthe leading one of the air core coils 9 moving in the guide hole 17 ofthe rail 27. Therefore, the tip of the rail 27 has a structure in whichthe part of the rail 27 over the upper face of the guide hole 17 isremoved. The shutter 31 forms a vacuum suction passage 30 b between itand the slider 26. Holes are bored in the shutter 31, the slider 26 andthe conveyor rail body 25 to form vacuum suction passages 30 c, 30 d and30 e. When the slider 26 moves towards the left end and the shutter 31hangs over the guide hole 17, these three holes overlap one another tosubject the air core coils 9 to vacuum suction as indicated by thickarrows in FIG. 37 to bring the leading one of the air core coils 9 intocontact with the stopper portion 28. This vacuum suction also aligns thesucceeding air core coils 9 in the guide hole 17 as shown in FIG. 38.

[0035] As illustrated in FIG. 39, when the shutter 31 is opened towardsthe right hand side, i.e. away from the end of the guide hole 17, theleading air core coil 9 and the leading edge of the second air core coil9 in a slight length are exposed. This opening action causes the vacuumsuction passage 30 d to be blocked by the shutter 31, and therefore thevacuum suction stops. The shutter 31 is shifted by, for instance, aslong as three times the length (3 St) of the air core coil 9. FIG. 40shows an enlarged section of these relationships.

[0036] Then, a collet 32 shifts, holds the air core coil 9 by vacuumsuction, and brings it to above the module substrate, and the air corecoil 9 is mounted.

[0037] Incidentally, since air core coils are extremely light asmentioned above, they may be easily moved by a variation in air flow(air pressure) at the time of switching vacuum suction or by vibration,and the ends of consecutive air core coils 9 may overlap each other asshown in FIG. 44 for example. In this case, the collet 32 becomes unableto securely hold the air core coil 9 by vacuum suction and carry it,making it impossible to mount the air core coil 9 over the modulesubstrate. If the vacuum suction force is increased to strengthen vacuumsuction by the collet, that vacuum suction force may disturb the coilalignment, and therefore the vacuum suction force of the collet cannotbe increased more than necessary, making its control delicate. FIG. 43illustrates an undisturbed line of air core coils 9.

[0038] An object of the present invention is to provide a semiconductordevice excelling in high frequency characteristics and permittingenhancement of output and efficiency and a reduction of manufacturingcost, and an electronic device into which the semiconductor device isincorporated.

[0039] Another object of the invention is to provide a high frequencypower amplifying device excelling in high frequency characteristics andpermitting enhancement of output and efficiency and a reduction ofmanufacturing cost, and a wireless communication device into which thehigh frequency power amplifying device is incorporated.

[0040] Another object of the invention is to provide a semiconductordevice mounted with air core coils of low D.C. resistance, and anelectronic device into which the semiconductor device is incorporated.

[0041] Another object of the invention is to provide a high frequencypower amplifying device mounted with air core coils of low D.C.resistance, and a wireless communication device into which the highfrequency power amplifying device is incorporated.

[0042] Another object of the invention is to provide a high frequencypower amplifying device whose oscillation margin can be improved, and awireless communication device into which the high frequency poweramplifying device is incorporated and which excels in speechcommunicating performance.

[0043] Another object of the invention is to provide a semiconductordevice manufacturing method permitting accurate and secure mounting ofcomponents fed in bulk on a wiring board.

[0044] Another object of the invention is to provide a semiconductordevice manufacturing method permitting accurate and secure mounting ofcoils fed in bulk on a wiring board.

[0045] Another object of the invention is to provide a semiconductormanufacturing apparatus capable of achieving steady supply of componentsin bulk.

[0046] Another object of the invention is to provide a semiconductormanufacturing apparatus capable of achieving capable of achieving steadysupply of coils in bulk.

[0047] The aforementioned and other objects and novel features of thepresent invention will become more apparent from the description in thisspecification and the accompanying drawings.

DISCLOSURE OF THE INVENTION

[0048] A typical aspect of the invention disclosed in this applicationwill be briefly described below.

[0049] A high frequency power amplifying device of the followingconfiguration is incorporated into a mobile telephone. The highfrequency power amplifying device is in a dual band configuration havingtwo amplifying lines. Each amplifying line has a multi-stageconfiguration in which a plurality of semiconductor amplifying elementsare connected in cascade, and a coil with a low D.C. resistance (aircore coil) is connected in series between the first terminal, the signalsupplying terminal, and the source voltage terminal of the semiconductoramplifying element of the final amplifying stage. The air core coil ismounted on the module substrate of the high frequency power amplifyingdevice.

[0050] For the supply of the source voltage, two source voltageterminals are provided. One of the source voltage terminals is connectedto the first amplifying stage of one amplifying line and to theremaining amplifying stages of the other amplifying line, and the other,to the first amplifying stage of the latter amplifying line and to theremaining amplifying stages of the former amplifying line (thisconfiguration is known as crossed connection).

[0051] The air core coil consists of a copper wire of 0.1 mm indiameter, with its surface covered with an insulating film, wound in aspiral form, and its two end portions which constitute electrodes arecovered with no insulating film, measuring about 0.56 mm in maximumouter diameter and about 0.9 mm in overall length. This type of coil of8 nH in inductance has a D.C. resistance of about 20 mΩ, much lower thanthe 100 mΩ D.C. resistance of a conventional chip inductor of 8 nH ininductance.

[0052] Mounting of air core coils in the manufacturing process of thehigh frequency power amplifying device is accomplished by conveying theleading one of the air core coils, shifted to the bulk feed section ofthe bulk feeder and aligned, after being held by the collet by vacuumsuction, to a prescribed position over the module substrate and fixed bymelting solder provided in advance on the module substrate and the aircore coil by temporary heating. Incidentally, the electronic componentsto be mounted on the module substrate are less tall than the air corecoils. Thus they are 1 mm in length and 0.5 mm in width and height, oreven smaller. The semiconductor chip on which the semiconductoramplifying element is formed is also thin. Therefore, the air core coilsof 0.56 mm in diameter, larger than other components to be packaged, aremounted after all the others are mounted.

[0053] The bulk feeder, which also is a semiconductor manufacturingapparatus, consists of a bulk accommodating case, a hopper, a conveyorrail and a bulk feed section. Air core coils accommodated in the bulkaccommodating case are gathered by the hopper to form a line, shiftedwithin the conveyor rail and carried to the bulk feed section. In thebulk feed section, a vacuum suction mechanism (not shown) temporarilyoperates to let the air core coils reach the bulk feed section. Whilethe vacuum sucking action of the vacuum suction mechanism is at halt,the shutter of the bulk feed section is opened, and the leading one ofthe exposed line of air core coils is held by the collet.

[0054] The hopper is configured of a cylindrical guide having a frustumconcave at its top end, and a feed shaft penetrating this guide forguiding the bulk in tandem along the center axis. The guide oscillatesup and down so that the bulk gather into the frustum concave of theguide and enter the guide hole of the feed shaft. The feed shaft isbuilt thin in wall thickness to prevent the bulk from riding on andstopping it. The positional relationship is such that, in a state inwhich the guide is at its lowest, there can arise no gap between theouter circumference of the feed shaft and the frustum concave face ofthe guide in which the bulk could be caught. So that no air core coilcan enter sideways into the guide hole of the feed shaft, the hole has around section which is shorter than the overall length of the air corecoil and slightly greater than the outer diameter of the air core coil.For this reason, the feed shaft is formed in a cylindrical shape.

[0055] The conveyor rail is formed of a single seamless member so thatthe bulk shifting along the guide hole may not be caught.

[0056] The bulk feed section has a stopper portion to position and stopthe bulk shifting along the guide hole of the conveyor rail; a sliderfitted to the conveyor rail to be able to reciprocate in the shiftingdirection of the bulk; a shutter, fitted to the slider to be able toreciprocate in the shifting direction of the bulk, for opening andclosing the top face of the guide hole; vacuum suction passages providedin the conveyor rail, the guide and the shutter to cause the bulk in theguide hole to advance towards the stopper portion by vacuum suction andconstituting part of the vacuum suction mechanism; and anopening/closing means for opening and closing the vacuum suctionpassages.

[0057] In the bulk feed section, in a state in which the top face of theupper end of the guide hole is blocked by the shutter, theopening/closing means acts to open the shutter to advance the bulk inthe guide hole towards the stopper portion. Next, the shutter acts toopen itself for a distance shorter than the length of a piece in thebulk to cause the opening/closing means to take a closing action. Then,the shutter takes an opening action together with the slider to giverise to a prescribed distance between the leading piece in the bulk andthe following piece. Next, the shutter takes a further opening action toexpose the leading piece in the bulk. In this state, the leading piecein the bulk is held by the collet by vacuum suction.

[0058] By the arrangement described above, (a) the air core coil has alower D.C. resistance than the chip inductor does. Therefore, when usedas an inductor connected to the final amplifying stage of a multi-stageamplifying line, it enables the DC loss to be reduced and the impedanceto be increased with less loss. For this reason, it is made possible toreduce the feedback of high frequency signals from the final amplifyingstage to the preceding amplifying stages, and to improve the oscillationmargin. As a result, the oscillation margin in the RF module isimproved, and accordingly speech communicating performance of the mobiletelephone is enhanced.

[0059] (b) In the dual band configuration, since the source voltagesupplied to the two amplifying lines is in crossed connection, thefeedback of leak signals to the first amplifying stage from thesubsequent amplifying stages (especially the final amplifying stage)through the power supply lines can be suppressed, and accordingly theoscillation margin can be improved. This improvement of the oscillationmargin is further strengthened by the use of the air core coil mentionedin (a) above.

[0060] (c) As the air core coil is configured by winding a copper wirewhose surface is covered with an insulating film in a dense spiral, itsmanufacturing cost is only about {fraction (1/7)} to ½ of that of theconventional chip inductor. Therefore, the cost can be reduced to about{fraction (1/7)} of the expensive chip inductor connected to the finalamplifying stage. If air core coils according to the invention are usedin place of the chip inductors used in other parts, their cost can beabout halved. This can result in a cost saving for the high frequencypower amplifying device. Likewise, the manufacturing cost of the mobiletelephone (wireless communication device) into which this high frequencypower amplifying device can also be reduced.

[0061] (d) As the air core coil measures 0.56 mm in maximum diameter and0.9 mm in length, both approximately, its mounted length is less thanthat of the conventional chip inductor, which is 0.5 mm in both widthand height and 1 mm in length.

[0062] (e) The mounting of the air core coil in the manufacture of thehigh frequency power amplifying device (semiconductor devicemanufacturing method) has the following advantages.

[0063] {circle over (1)} Among the electronic components to be mountedover the module substrate, the air core coil is the highest, but it ispackaged after all the other electronic components have been mounted.Therefore, the collet holding the air core coil by vacuum suction doesnot come into contact with the electronic components already mountedover the module substrate or damage other electronic components. Thiscan mean an improved packaging yield.

[0064] {circle over (2)} After the leading one of the air core coils,shifted to the bulk feed section bulk feeder and aligned in tandem, isheld by the collet by vacuum suction, it is carried to a prescribedposition over the module substrate and, though after that it is fixed bymelting solder provided in advance on the module substrate and the aircore coil by temporary heating, in the bulk feed section the leading aircore coil is fed separately from the following air core coil.Accordingly, there can occur no error in vacuum suction holding by thecollet which would otherwise occur as the following air core coiloverlaps or is caught by the leading air core coil, resulting inaccurate and secure packaging, which moreover can be carried out moreefficiently. Therefore, the process is made less susceptible topackaging faults or machinery stopping, making it possible to reduce thepackaging cost.

[0065] {circle over (3)} As the wall of the cylindrical feed shaft isthin in the hopper portion, the bulk will not ride on and stop theshaft, and the air core coil to the bulk feed section is made moresecure, making possible stable feeding.

[0066] {circle over (4)} As the positional relationship in the hopperportion is such that, in a state in which the guide is at its lowest,there can arise no gap between the outer circumference of the feed shaftand the frustum concave face of the guide in which the bulk could beheld, there is no possibility for an air core coil to be caught betweenthe outer circumference of the feed shaft and the frustum concave faceof the guide. Therefore, the air core coils can be prevented fromdeformation or any deformed air core coil from being mounted, makingpossible an improvement in packaging yield. It is also made possible tostably feed the bulk feed section with air core coils.

[0067] {circle over (5)} As the guide hole of the feed shaft has a largeround section, no air core coil can clog the guide hole, making itpossible to stably feed the bulk feed section with air core coils.

[0068] {circle over (6)} As the conveyor rail is formed of a singleseamless member, no air core coil can be caught on the way of the guidehole, making it possible to stably feed the bulk feed section with aircore coils.

BRIEF DESCRIPTION OF THE DRAWINGS

[0069]FIG. 1 is a plan showing the layout of electronic componentsmounted over a module substrate in a high frequency power amplifyingdevice, which is an embodiment of the present invention (Embodiment 1).

[0070]FIG. 2 is a perspective view showing the appearance of the highfrequency power amplifying device, which is this Embodiment 1.

[0071]FIG. 3 shows a typical view of a coil mounted on the modulesubstrate.

[0072]FIG. 4 is a block diagram showing the circuit configuration of thehigh frequency power amplifying device, which is this Embodiment 1.

[0073]FIG. 5 is an equivalent circuit of a power supply line formed overthe module substrate in the high frequency power amplifying device,which is this Embodiment 1.

[0074]FIG. 6 is a graph showing the loss on the strip line.

[0075]FIG. 7 is a graph showing the loss in the chip inductor.

[0076]FIG. 8 is a graph showing the loss in the coil.

[0077]FIG. 9 is a graph showing the correlation between the D.C.resistance and the inductance in the air core coil and the chip coil.

[0078]FIG. 10 is a block diagram showing a partial configuration of amobile telephone into which the high frequency power amplifying device,which is this Embodiment 1, is incorporated.

[0079]FIG. 11 shows a typical view of a state in which the coil ispackaged on the module substrate in the high frequency power amplifyingdevice, which is this Embodiment 1, by using a bulk feeder, a collet andso forth pertaining to the invention.

[0080]FIG. 12 show typical views of the state in which the coil ispackaged.

[0081]FIG. 13 shows a typical sectional view of the hopper portion inthe bulk feeder.

[0082]FIG. 14 is a plan of the hopper.

[0083]FIG. 15 shows a typical front view of a coil conveyor rail,continuous to the hopper, for carrying the coil.

[0084]FIG. 16 shows a section of the detecting portion of the coil inthe hopper.

[0085]FIG. 17 shows an enlarged section of part of FIG. 16.

[0086]FIG. 18 shows an enlarged section of the bulk feed section at thetip of the coil conveyor rail in a state of vacuum suction.

[0087]FIG. 19 shows a further enlarged section of part of FIG. 18.

[0088]FIG. 20 shows an enlarged section of the bulk feed section in astate in which vacuum suction is stopped.

[0089]FIG. 21 shows a further enlarged section of part of FIG. 20.

[0090]FIG. 22 shows an enlarged section of the bulk feed section in astate in which the leading coil is separated from the other coils.

[0091]FIG. 23 shows a further enlarged section of part of FIG. 22.

[0092]FIG. 24 shows an enlarged section of the coil at the tip of thebulk feed section in a state of being held by the collet.

[0093]FIG. 25 shows a further enlarged section of part of FIG. 24.

[0094]FIG. 26 shows an enlarged typical view of a coil of anotherstructure in a state of being mounted over the module substrate.

[0095]FIG. 27 shows an enlarged typical side view of the coil and soforth in FIG. 26.

[0096]FIG. 28 shows an enlarged plan of the coil shown in FIG. 26.

[0097]FIG. 29 shows an enlarged section of the coil shown in FIG. 26.

[0098]FIG. 30 shows an enlarged profile of the coil shown in FIG. 26.

[0099]FIG. 31 shows an enlarged plan of a coil of another structure.

[0100]FIG. 32 shows a partial typical view of part of a bulk feeder,which is another embodiment of the invention (Embodiment 2).

[0101]FIG. 33 is a block diagram showing the circuit configuration of ahigh frequency power amplifying device studied by the present inventorsbefore the present invention.

[0102]FIG. 34 shows a typical view of a bulk feeder according to theprior art.

[0103]FIG. 35 shows a typical section of the hopper portion of bulkfeeder according to the prior art.

[0104]FIG. 36 shows a plan of the hopper portion according to the priorart.

[0105]FIG. 37 shows an enlarged section of the bulk feed section of thebulk feeder according to the prior art in a state under vacuum suction.

[0106]FIG. 38 shows a further enlarged section of part of FIG. 37.

[0107]FIG. 39 is an enlarged sectional view of the bulk feed sectionaccording to the prior art in a state in which the shutter is open.

[0108]FIG. 40 shows a further enlarged section of part of FIG. 39.

[0109]FIG. 41 shows an enlarged section of a state in the bulk feederaccording to the prior art in which a coil from the bulk feed section isheld by a collet.

[0110]FIG. 42 shows a further enlarged section of part of FIG. 41.

[0111]FIG. 43 shows a typical view of coils aligned without being caughtby one another in the bulk feed section.

[0112]FIG. 44 show a typical view of a state in which the leading coiland the coil behind it are caught by each other in the bulk feedsection.

[0113]FIG. 45 shows a typical perspective view of the correlationbetween a coil and electrodes for fixing the coil in a high frequencypower amplifying module, which is another embodiment of the invention(Embodiment 3).

[0114]FIG. 46 shows a plan of part of the high frequency poweramplifying module, which is this Embodiment 3.

[0115]FIG. 47 variously illustrate the mounted state of a coil in thisEmbodiment 3.

[0116]FIG. 48 is a graph showing the dependence of deviations in coilmounting on dimensional variations in different parts of the electrodes.

[0117]FIG. 49 is another graph showing the dependence of deviations incoil mounting on dimensional variations in different parts of theelectrodes.

[0118]FIG. 50 shows a three-dimensional view of a state in which solderapplied to electrodes on the module substrate is remelted.

[0119]FIG. 51 shows a sectional view of the state in which solderapplied to the electrodes on the module substrate is remelted.

[0120]FIG. 52 illustrate a faulty case in which a coil is fixed torectangular electrodes by reflowing.

[0121]FIG. 53 shows a typical front view of a reflowing furnace for usein this Embodiment 3.

[0122]FIG. 54 schematically shows a typical plan of the reflowingfurnace.

[0123]FIG. 55 schematically shows a typical front view of a reflowingfurnace for mounting a coil in a high frequency power amplifying module,which is another Embodiment of the invention (Embodiment 4).

[0124]FIG. 56 shows a typical front view of the reflowing furnace in astate in which reflowing is carried out in a nitrogen ambience.

[0125]FIG. 57 shows a typical sectional view of a state in whichreflowing is carried out in the nitrogen ambience.

[0126]FIG. 58 shows a typical plan of a coil properly mounted byreflowing in a nitrogen ambience.

BEST MODES FOR CARRYING OUT THE INVENTION

[0127] Preferred embodiments of the present invention will be describedin detail below with reference to drawings. In all the drawings fordescribing the embodiments of the invention, constituent elements havingthe same functions are denoted by respectively the same reference signs,and their description is not repeated.

[0128] (Embodiment 1)

[0129]FIG. 1 through FIG. 31 pertain to a semiconductor device (highfrequency power amplifying device), which is a preferred embodiment ofthe invention (Embodiment 1) together with a manufacturing methodtherefor, and a wireless communication device (electronic device) ThisEmbodiment 1 described below is a case in which the invention is appliedto a high frequency power amplifying device (hybrid integrated circuitdevice) as a semiconductor device. The high frequency power amplifyingdevice, which is this Embodiment 1, is for dual band use, for instance adual band high frequency power amplifying device built into a mobiletelephone (wireless communication device), into which a GSMcommunication system and a DCS communication system are incorporated.

[0130] A high frequency power amplifying device (high frequency poweramplifier module) 1 in this Embodiment 1 is a flat rectangular structurein external view as shown in FIG. 2. This high frequency poweramplifying device 1 has a configuration in which a module substrate 5,consisting of a ceramic wiring board, and a cap 6 fitted on one side(main face side) of this module substrate 5, together constituting apackage 7 of flat rectangular structure. The cap 6, made of a metalperforming the role of an electromagnetic shield, is a press-moldeditem.

[0131]FIG. 4 is a block diagram showing the circuit configuration of thehigh frequency power amplifying device, which is this Embodiment 1. Thishigh frequency power amplifying device 1 has, as external electrodeterminals, a GSM input terminal (Pin GSM {circle over (1)}), a controlterminal (Vapc {circle over (2)}), one source voltage terminal for asource voltage Vdd (Vdd1 {circle over (3)}), a GSM output terminal (PoutGSM {circle over (4)}), a DCS output terminal (Pout DCS {circle over(5)}), the other source voltage terminal for the source voltage Vdd(Vdd2 {circle over (6)}), a communication band switching terminal (Vct1{circle over (7)}), a DCS input terminal (Pin DCS {circle over (8)}),and a ground voltage terminal (GND) (not shown). The terminalarrangement is such that, as shown in FIG. 1, there are terminals{circle over (1)}, {circle over (2)}, {circle over (3)} and {circle over(4)} from left to right on the lower side (in the drawing) of the modulesubstrate 5 and terminals {circle over (5)} through {circle over (8)}from right to left on the upper side.

[0132] The amplifying lines of both DCS and GSM are configured foramplification in three stages. The DCS amplifying line consists ofamplifying stages denoted by 1st, 2nd and 3rd (amp1, amp2 and amp3), andthe GSM amplifying line, of amplifying stages denoted by 1st, 2nd and3rd (amp4, amp5 and amp6). Each amplifying stage is formed of a fieldeffect transistor (FET) (not shown) consisting of a silicon substrate.

[0133] In this configuration, Pin DCS {circle over (8)} is connected toamp1, and Pout DCS {circle over (5)}, to amp3. Pin GSM {circle over (1)}is connected to amp4, and Pout GSM {circle over (4)}, to amp6.

[0134] Vapc {circle over (2)} is connected to a bias circuit 2, and amp1through amp6 are controlled with signals inputted to this Vapc {circleover (2)}.

[0135] Vdd1 {circle over (3)} is connected to amp1 via a microstrip lineMS1, to amp5 via a microstrip line MS4 and to amp6 via an inductor L2.Further to Vdd1 {circle over (3)}, a capacitance C1 of which one end isgrounded at GND is externally connected to stabilize high frequencycharacteristics.

[0136] Vdd2 {circle over (6)} is connected to amp4 via a microstrip lineMS3, to amp2 via a microstrip line MS2, and to amp3 via an inductor L1.Further to Vdd2 {circle over (6)}, a capacitance C2 of which one end isgrounded at GND is externally connected to stabilize high frequencycharacteristics.

[0137] Thus two terminals (Vdd1{circle over (3)} and Vdd2 {circle over(6)}) are made available for the source voltage, and one source voltageterminal supplies the source voltage to the first amplifying stage ofone amplifying line and the second and third amplifying stages of theother amplifying line, while the other source voltage terminal suppliesthe source voltage to the first amplifying stage of the latteramplifying line and the second and third amplifying stages of the formeramplifying line, i.e. in a so-called crossed connection. Therefore, thefeedback of leak signals to the first amplifying stage from thesubsequent amplifying stages (especially the final amplifying stage)through the power supply lines can be suppressed, and accordingly theoscillation margin can be improved.

[0138] The inductors L1 through. L3 of 8 nH in inductance are formed ofair core coils having a D.C. resistance of 20 mΩ, a far lower D.C.resistance than the 100 mΩ-D.C. resistance of the conventional chipinductors of 8 nH in inductance.

[0139] Vct1 {circle over (7)} is connected to a band select circuit 3.This band select circuit 3 is configured of three source-groundedn-channel type field effect transistors (FETs) Q8, Q9 and Q10 and oneresistor R1. The gate terminals of Q8 and Q9 are connected to Vct1{circle over (7)}. The gate terminal of Q10 is connected to the drainterminal of Q9, and its drain terminal is connected to the output sideof amp5 via a resistance R2. The drain terminal of Q9 is connected toVdd2 {circle over (6)} via the resistor R1. The drain terminal of Q8 isconnected to the input side of amp3 via the inductor L3. Band switchingis accomplished with signals supplied to Vct1 {circle over (7)} toperform amplification for either DCS communication or GSM communication.

[0140]FIG. 1 is a plan illustrating the layout of electronic componentsmounted over the module substrate 5 consisting of a low-temperaturefired ceramic wiring board formed by stacking, for instance, glassceramics.

[0141] As shown in FIG. 1, four semiconductor chips 8 a through 8 d,three air core coils 9 a through 9 c, and many unnumbered chip resistorsand chip capacitors are mounted on the surface of the module substrate5.

[0142] Conductors are selectively formed not only on the top and bottomfaces of but also inside the module substrate 5, and these conductorsconstitute wiring 4. Part of this wiring 4 constitutes mounting pads 4 afor fixing the semiconductor chips 8 a through 8 d, electrode fixingpads 4 b for fixing chip type electronic components including chipresistors and chip capacitors or electrodes of the air core coils 9 athrough 9 c, or wire bonding pads 4 c for connecting one end each ofwires 20 of which the other end each is connected to the electrodes (notshown) of the semiconductor chips 8 a through 8 d. On the bottom side ofthe module substrate 5 are formed surface-packaged electrodes by thewiring 4 to form the external electrode terminals {circle over (1)}through {circle over (8)}. These external electrode terminals are in aland grid array (LGA) structure.

[0143] The semiconductor chips 8 a through 8 d are fixed onto theconcave bottom provided in the main face of the module substrate 5. Insemiconductor chips which generate a large quantity of heat duringoperation, via holes are bored in the module substrate 5 underneath thechips and filled with the aforementioned conductors to transmit the heatto the back face of the module substrate 5.

[0144] To further elaborate on the semiconductor chips 8 a through 8 d,the 1st and 2nd semiconductor amplifying elements for DCS use areincorporated into the semiconductor chip 8 a, and the 3rd semiconductoramplifying element for DCS use is incorporated into the semiconductorchip 8 b. Further, the 1st and 2nd semiconductor amplifying elements forGSM use are incorporated into the semiconductor chip 8 c, and the 3rdsemiconductor amplifying element for GSM use is incorporated into thesemiconductor chip 8 d.

[0145] On the other hand, as one of the characteristics of the presentinvention, the inductors L1 through L3 in the high frequency poweramplifying device 1 are formed of coils (the air core coils 9 a through9 c) as shown in the block diagram of FIG. 4.

[0146]FIG. 3(b) illustrates the air core coil 9 a (9) mounted over themodule substrate 5. Each air core coil 9 comprises an inductor portion22 whose surface is covered with an insulating film and electrodes 23 atboth ends covered with no insulating film. This air core coil 9 has sixwinds in the inductor portion 22 and two winds in each of the electrodes23. The air core coil 9 is packaged by fixing its electrodes 23 to thewiring 4 b of the module substrate 5 with solder 24. Incidentally, theair core coil 9 shown in FIG. 3(a) has eight winds in the inductorportion 22 and one wind in each of the electrodes 23.

[0147] The air core coil 9 is so structured that, for example, a copperwire of 0.1 mm in diameter whose surface is covered with an insulatingfilm (e.g. a polyethylene film) is spirally wound to an outer diameterof 0.56 mm and a length of 0.9 mm. Before the copper wire is spirallywound, the insulating film at its both ends is removed to a certainlength, and the parts of the coil deprived of the insulating filmconstitute the external electrodes 23. The part of coil covered with theinsulating film makes up the inductor portion 22. This air core coil 9is very light, weighing only 0.00725 mg. As this coil is produced bywinding a copper wire, its cost is about {fraction (1/7)} of that of aconventional chip inductor (for instance, a chip inductor of which thecurrent capacity is about 2.1 A, the inductance is 8 nH and the D.C.resistance is 100 mΩ). Compared with a chip inductor of a smallercurrent capacity, the cost is about ½.

[0148] Such a high frequency power amplifying device 1 is not onlyimproved in oscillation margin but also reduced in transmission loss aswill be detailed below.

[0149] (1) Measures Against Oscillation Margin

[0150] In the circuit shown in FIG. 33, as the GSM and DCS circuitchains use a common power supply line, there is formed a feedback loopin which leak signals from the 3rd FET return to the 1st FET via thepower supply line, resulting in susceptibility to oscillation.

[0151] By contrast, the circuit of this Embodiment 1 shown in FIG. 4 isprovided with two source voltage terminals are provided (Vdd1 and Vdd2),and the adverse effect of this feedback loop is reduced by supplyingpower from a separate source voltage terminal to the 1st FET, whoseamplification gain is the greatest, to suppress the feedback to the 1stFET, resulting in improvement in oscillation margin.

[0152] Furthermore, as the inductor to the power supply line part to the3rd FET is formed of the air core coil 9 lower in D.C. resistance in theGSM and DCS amplifying lines, the D.C. loss is reduced, making itpossible to decrease the power loss and increase the impedance. As aresult, the feedback of RF signals from the 3rd FET to the 2nd FET canbe reduced, adding to the oscillation margin improving effect of theaforementioned crossed connection.

[0153] (2) Reduction of Transmission Loss by Application of Air CoreCoil to Power Supply Line

[0154] In size reduction and multi-functionalization accompanying therise in the integration level of circuits, it is required to increasethe packaging density of components, and the strip line and the likeshould be laid out in inner layers of the substrate. However, laying outthe power supply line in inner layers of the substrate entail thefollowing problems.

[0155] {circle over (1)} The high frequency transmission loss (RF)increases with the drop in characteristic impedance.

[0156] {circle over (2)} If the strip line is elongated to reduce the RFloss, the D.C. loss will increase.

[0157] {circle over (3)} The elongated strip line would occupy a greaterspace, and thereby prevent the size of the module substrate 5,accordingly that of the high frequency power amplifying device 1, frombeing reduced.

[0158] Losses on the power supply line can be broadly classified intothe D.C. loss due to the wiring resistance component and the RF loss dueto the impedance component. The D.C. loss can be reduced by shorteningthe power supply line (the strip line), but this would entail a drop inthe impedance of the power supply line and an increase in RF loss.

[0159] An explanation of losses on the power supply line might berelevant here.

[0160] (1) D.C. Loss

[0161] When a current flows along a power supply line, the voltage isreduced by the parasitic resistance component of the wiring conductor,and the voltage applied to the drain of the FET will drop, invitingdecreases in output and efficiency. The loss (D.C. loss in dB) is givenby the following equation.

Loss=10log(Vdd·Idd)−10log{[Vdd−(L/W)·Rs·Idd]Idd}  [Equation 1]

Voltage drop=(L/W)·Rs·Idd  [Equation 2]

[0162] where L is the line length, W, the line width and Rs, theconductor resistance.

[0163] (2) RF Loss

[0164] For the analysis of the transmission loss dependent on therelationship between the impedance of the power supply line and thedrain impedance of the FET, a simulator Microwave Design System (MDS)was used.

[0165] Where the input signal source is supposed to be the FET, theinput can be calculated as being unmatched and the output as matched,and the calculation was conducted in terms of Ga (available power gain),on which the influence of the power supply line to the FET isdiscernible. Ga is given by the following equation.

Ga=|S21|²·(1−|Γs| ²)/{1−|S22|² +|Γs| ²·[(|S11|² −|D| ²)−2Re(S11−D·S22*)]}  [Equation 3]

D=S11·S22−S12·S21  [Equation 4]

RF loss (dB)=10log(Ga)  [Equation 5]

[0166] where S11·S12·S21·S22 is an S parameter; S11, the inputimpedance; S12, the isolation; S21, the transmission gain; S22, theoutput impedance; S22*, the output impedance complex conjugate; Re, thereal part; and γs, the input reflection coefficient.

[0167] In order to the reduce the RF loss on the power supply line, itis necessary to increase the impedance (Z2) of the power supply line inthe equivalent circuit to the transmission line and the power supplyline shown in FIG. 5. Referring to FIG. 5, a power supply line of lengthL is provided between the input end (IN) and the output end (OUT) of thetransmission line, and Vdd is supplied to an end of the power supplyline. In FIG. 5, Z0 denotes the characteristic impedance of the powersupply line; Z1, the impedance of the connecting part of thetransmission line to the power supply line; Z2, the impedance of thepower supply line; and L, the length of the power supply line. Thefollowing equations are given in this equivalent circuit.

|Z 1|=(a ² +b ²)^(1/2)  [Equation 6]

Z 2=Z 0(ZL+jZ 0 tan βL)/(Z 0+jZL tan βL)  [Equation 7]

[0168] Here, deriving from ZL (stub impedance)≈0:

Z2=jZ0 tan βL  [Equation 8]

β=2π/λ  [Equation 9]

[0169] Although these results of calculation reveal that the powersupply line impedance (Z2) is made open with respect to the fundamentalwave by setting the length of the strip line to λ/4 and the impedancebecomes infinitely large, but, because the openness does not becomevisible until signals transmitted over the power supply line arereflected by a short-circuiting face (bypass capacitor) and return,there arises a transmission loss and accordingly the loss is notabsolutely zero. Therefore, designing of the power supply line should beconsidered in terms of both D.C. loss and RF loss, and a condition toreduce the losses should be designed.

[0170]FIG. 6 shows the relationship between Z2 of the strip line and theloss on the power supply line. It is seen that there is an optimal pointbetween RF loss and D.C. loss. Thus, when the frequency f is 900 MHz,the line width W, 0.3 mm, the substrate thickness t (inner layer), 0.3mm and the substrate inductance εr, 8.1, the optimal point is at a stripline length of 12 mm.

[0171] However, there is a problem that, where the strip line isarranged in an inner layer of the substrate, the transmission loss willbe as great as approximately 0.4 dB, resulting in a heavy drop in powerefficiency.

[0172] The transmission losses in a case wherein a chip inductor or anair core coil is respectively used on the power supply line are shown inFIG. 7 and FIG. 8. The chip inductor can reduce the transmission loss toabout ¼ compared with the inner-layer strip line, and the air core coilcan further reduce the D.C. loss to about ½ compared with the chipinductor. The air core coil and the chip inductor are compared in termsof D.C. resistance in FIG. 9. The loss reduction by the application ofthe air core coil corresponds to an approximately +5% improvement inpower efficiency over the inner-layer strip line.

[0173] Next will be described a mobile telephone (electronic device)into which the high frequency power amplifying device 1 is incorporated.FIG. 10 is a block diagram showing the system configuration of themobile telephone (wireless communication device) into which the highfrequency power amplifying device 1, which is this Embodiment 1, isincorporated. More specifically, it shows the system configuration ofthe mobile telephone (mobile communication terminal).

[0174]FIG. 10 is a block diagram showing part of a dual band wirelesscommunication apparatus, the part ranging from a high frequency signalprocessing IC (RF linear) 50 to an antenna 51. Incidentally in FIG. 10,two separate amplifying lines of the high frequency power amplifyingdevice are shown, one for GSM use and the other for DCS use, and theiramplifiers are shown as power amplifiers (PAs) 58 a and 58 b.

[0175] The antenna 51 is connected to the antenna terminal (marked“Antenna”) of an antenna transmit/receive switch 52. The antennatransmit/receive switch 52 has terminals Pout 1 and Pout 2 to which theoutputs of PAs 58 a and 58 b are inputted, reception terminals RX1 andRX2, and control terminals control 1 and control 2.

[0176] Signals for GSM use from the high frequency signal processing IC50 are fed to the PA 58 a and outputted to Pout 1. The output of the PA58 a is detected by a coupler 54 a, and the resultant detection signalis fed back to an automatic power control circuit (APC circuit) 53. TheAPC circuit 53, operating in accordance with the detection signal,controls the PA 58 a.

[0177] Similarly, signals for DCS use from the high frequency signalprocessing IC 50 are fed to the PA 58 b and outputted to Pout 2. Theoutput of the PA 58 b is detected by a coupler 54 b, and the resultantdetection signal is fed back to the APC circuit 53. The APC circuit 53,operating in accordance with the detection signal, controls the PA 58 b.

[0178] The antenna transmit/receive switching unit 52 has a duplexer 55.This duplexer 55 has terminals, of which one is connected to the antennaterminal Antenna, and one of the other two terminals is connected to atransmit/receive switch 56 a for GSM use, while the other is connectedto a transmit/receive switch 56 b for DCS use.

[0179] The contact a of the transmit/receive switch 56 a is connected toPout 1 via a filter 57 a. The contact b of the transmit/receive switch56 a is connected to the reception terminal RX1 via the capacitance C1.The transmit/receive switch 56 a is switched in electrical connection tothe contact a or the contact b by a control signal inputted to thecontrol terminal control 1.

[0180] The contact a of the transmit/receive switch 56 b is connected toPout 2 via a filter 57 b. The contact b of the transmit/receive switch56 b is connected to the reception terminal RX2 via the capacitance C2.The transmit/receive switch 56 b is switched in electrical connection tothe contact a or the contact b by a control signal inputted to thecontrol terminal control 2.

[0181] Between the reception terminal RX1 and the high frequency signalprocessing IC 50 are successively connected a filter 60 a and a lownoise amplifier (LNA) 61 a. Also, between the reception terminal RX2 andthe high frequency signal processing IC 50 are successively connected afilter 60 b and a low noise amplifier (LNA) 61 b.

[0182] This wireless communication apparatus makes possible GSMcommunication and DCS communication.

[0183] Next will be described the technique of packaging air core coils9 in the manufacture of the high frequency power amplifying device 1. Inpackaging air core coils 9, a bulk feeder 21 shown in FIG. 11, whichalso is a semiconductor manufacturing apparatus, is used. The bulkfeeder 21 of this Embodiment 1 is an improved version of the bulk feedershown in FIG. 34, enabled to stably feed air core coils 9.

[0184] The bulk feeder 21, though similar to the conventional one inthat it has the bulk accommodating case 10, the hopper 11, the conveyorrail 13 and the bulk feed section 12, is improved for stable feeding ofair core coils by, {circle over (1)} in the hopper 11 part, restrainingthe stopping of air core coils 9 on the feed shaft 18, restraining aircore coils 9 from being rolled between the feed shaft 18 and the frustumconcave 15, and restraining air core coils 9 from clogging the guidehole 17 in the feed shaft 18.

[0185] {circle over (2)} In the conveyor rail 13, the guide hole 17 isformed of a single member in order to prevent air core coils 9 frombeing caught by any seam.

[0186] {circle over (3)} In the bulk feed section 12, to prevent theleading one of the air core coils 9 proceeding in tandem from beingentangled with the second air core coil 9, there is introduced a meansto separate the leading air core coil 9 from the following air core coil9 at a stage before it is held by the collet 32.

[0187] The method of packaging air core coils 9 using such a bulk feeder21 (semiconductor device manufacturing method) is executed, as shown inFIG. 11, by moving the collet 32 fitted to the tip of a moving arm 33between the bulk feed section 12 and a table 34 on which the modulesubstrate 5 is mounted as indicated by arrows. In this process, afterthe leading air core coil 9 is separated from the following air corecoil 9 in a mechanism to be described afterwards, the air core coil 9 isheld by the collet 32 by vacuum suction.

[0188] This packaging of this air core coil 9 is carried out aftermounting other electronic components than the air core coil 9, such aschip resistors and chip capacitors. If the air core coil 9 were packagedearlier, when the electronic components which are less in mounted heightthan the air core coil 9 are packaged, the collet might come intocontact with the packaged air core coil 9. This contact might give riseto, for instance, a crack or division in the solder 24 part connectingthe electrodes 23 of the air core coil 9 to the electrode fixing pads 4b. The purpose is to prevent this kind of trouble from occurring.

[0189] FIGS. 12(a) through 12(c) show typical views of the state inwhich the air core coil 9 is packaged. After the air core coil 9 fedfrom the bulk feed section 12 of the bulk feeder 21 is held on thesucking face at the lower end of the collet 32 by vacuum suction, it iscarried to the air core coil fitting position over the module substrate5 as shown in FIG. 12(a). The sucking face of the collet 32 has an arcedsection to match the outer circumference of the cylindrical air corecoil.

[0190] Next, as shown in FIG. 12(b), the pair of electrodes 23 of theair core coil 9 are positioned over the pair of electrode fixing pads 4b of the module substrate 5 so that each electrode be superposed overthe other pad, and the air core coil 9 is mounted over the modulesubstrate 5 in that position.

[0191] Then, the solder 24 provided in advance over the electrode fixingpads 4 b is temporarily melted by reflowing to fix the electrodes 23 onthe solder 24, and the packaging is thereby completed as shown in FIG.12(c).

[0192] Next will be described the bulk feeder 21 with reference to FIG.11 through FIG. 25. Whereas FIG. 11 and others are partial, simplifieddrawings, the following description will mainly focus only onimprovements over the conventional bulk feeder.

[0193] As shown in FIG. 11, the bulk feeder 21 of this Embodiment 1 hasthe bulk accommodating case 10 for accommodating bulk, the hopper 11provided underneath this bulk accommodating case 10, and the conveyorrail 13 for guiding the bulk, taken in from this hopper 11, to the bulkfeed section 12 at the tip.

[0194] The bulk accommodating case 10 is structured in a thin box shape,with its inner bottom constituting slopes 14 for gathering the bulk fromboth sides toward the center. At the center of these slopes 14 isarranged the hopper 11 vertically penetrating the central part. Thishopper 11 is so structured that the bulk gathered in the inner bottompart of the slopes 14 be aligned in tandem to be taken out of the bulkaccommodating case 10. Regarding this Embodiment 1, a case of feedingair core coils in bulk will be described.

[0195] As shown in FIG. 13 and FIG. 14, the hopper 11 is configured of aguide 16 having the frustum concave 15 at the top end, and the feedshaft 18 having the guide hole 17 piercing this guide 16 and guiding theair core coils 9 aligned in tandem (a state in which the air core coils9 are aligned with the electrode at the rear end of an air core coil 9being in contact with the electrode at the fore end of the immediatelyfollowing air core coil 9) along the center axis. The feed shaft 18 isformed in a cylindrical shape and has at its center the guide hole 17with a round section. The air core coil 9 measures 0.56 mm in maximumouter diameter and 0.9 mm in length.

[0196] Then in this Embodiment 1, in order not to let any air core coiltopple sideways in the guide hole 17 and block the hole, the diameter ofthe guide hole 17 is set smaller than the 0.9 mm length of the air corecoil 9 and greater than the 0.56 mm maximum outer diameter of the aircore coil 9. For instance, the guide hole 17 is 0.68 mm in bore, so thatthe guide hole 17 cannot be blocked by any air core coil 9 turnedsideways.

[0197] Further as shown in FIG. 13, the guide 16 vertically oscillatesin a stroke three times as great as the length (0.9 mm) of the air corecoil 9, and guides the air core coil 9 in the bulk accommodating case 10to the center of the frustum concave 15. In this oscillation, the topend of the feed shaft 18 is structurally prevented from protruding intothe frustum concave 15 of the feed shaft 18. The drawing illustrates astate in which the guide 16 is at its bottom dead center and the top endof the feed shaft 18 coincides with the bottom of the frustum concave15.

[0198] This arrangement eliminates the trouble with the prior art thatthe air core coil 9 is held between the outer circumference of the feedshaft 18 and the surface of the frustum concave 15, and prevents the aircore coil 9 from being deformed or the apparatus from running intotrouble which might be caused by the squeezing due to such holding.

[0199]FIG. 15 shows an enlarged typical view of the conveyor rail 13.The conveyor rail 13 is also provided with a guide hole 17 acommunicating to the guide hole 17 of the feed shaft 18. This guide hole17 a, as typically illustrated in FIG. 15, is formed by providing agroove in a prescribed member and blocking this groove. The tip of theconveyor rail 13 constitutes the bulk feed section 12, and the guidehole 17 a from the feed shaft 18 to the bulk feed section 12 is formedof a single member. The conveyor rail 13 is formed by combining aplurality of members. Though description of these members will bedispensed with, they are combined, for instance, as shown in FIG. 16. Avacuum suction passage is formed of a pipe in the part shown in FIG. 16,but its illustration is also dispensed with.

[0200] Since the bulk feeder 21 of this Embodiment 1 has no seam whichwould catch the air core coil 9 on the way of the conveyor rail 13, theair core coil 9 is smoothly transferred by the guide hole 17 a to thebulk feed section 12. This transfer is accomplished by a vacuum suctionmechanism (not shown). To the left end of the conveyor rail 13 is fitteda pipe 35 leading to the vacuum suction mechanism. This pipe 35 passesinside the lower part of a conveyor rail body 25 constituting theconveyor rail 13 to extend to the bulk feed section 12, and communicatesto a vacuum suction passage to be described afterwards. The pipe carriesout vacuum suction from the bulk feed section 12 side to transfers theair core coil 9 towards the bulk feed section 12. Therefore as each aircore coil 9 is transferred by vacuum suction, air core coils 9 beforeand behind are in close contact with each other, which may inviteintertwisting of their ends.

[0201]FIG. 15 through FIG. 17 illustrate a light emitting element 36 fordetecting the passing air core coils 9 in part of the guide hole 17 aand a light receiving element 38 for receiving a light 37 emitted bythat light emitting element 36. When the feed shaft is filled with aircore coils 9 to this sensor position, the vertical movement of thehopper is stopped to prevent any more coil from entering the feed shaft.

[0202] The bulk feed section 12 is structured as shown in FIG. 18, andoperates as illustrated in FIG. 18 through FIG. 25. The bulk feedsection 12, as shown in FIG. 18, has a step lower concave in the upperside of the tip of the conveyor rail body 25 towards the tip of theconveyor rail 13, and the slider 26 is fitted in this concave to be ableto reciprocate in the transferring direction of air core coils 9. Thestroke of that reciprocation is, for instance, about half (0.5 St) ofthe length of the air core coil 9 (see FIG. 23).

[0203] The guide hole 17 a guiding the air core coil 9 extends to theleft end of the slider 26. As shown in FIG. 19, at the left end of theslider 26, there is provided a receptacle 40 that can accommodate oneair core coil 9. At one end of this receptacle 40, i.e. the right endfarther from the edge of the guide hole 17 a, there is provided astopper portion 28, and a projection 41 is provided at the left end,closer to the edge of the guide hole 17 a.

[0204] The stopper portion 28 has a reference face for defining the foreend position of the leading air core coil 9 having proceeded within theguide hole 17 a and dropped into the receptacle 40. The projection 41performs the role of so pushing from behind the leading air core coil 9that it may move ahead without fail when the slider 26 shifts (ahead) inthe direction of going away from the edge of the guide hole 17 a asdescribed above (for the projection 41, see FIG. 23).

[0205] In the slider 26, the stopper portion 28 comes into contact withthe upper side of the fore end of the air core coil 9, and its lowerpart is a partially open space. This space constitutes the vacuumsuction passage 30 a for bringing the air core coil 9 into contact withthe stopper portion 28 under vacuum suction.

[0206] This Embodiment 1 uses a configuration of positioning the guidehole 17 a a step lower in accordance with the idea that the leading aircore coil 9 can be separated from the following air core coil 9 and thetwo air core coils 9 can be prevented from catching each other byshifting the leading air core coil 9 in a direction crossing itsproceeding direction. Further on the basis of the idea of separating theleading air core coil 9 from the following air core coil 9 and therebypreventing them from catching each other, the slider 26 is positioned0.5 St ahead.

[0207] Therefore, according to the idea of separating the leading aircore coil 9 from the following air core coil 9 and thereby preventingthem from catching each other, the configuration may as well be suchthat the projection 41 is not provided, the receptacle 40 is arrangeddirectly on the extension of the guide hole 17 a and only the stopperportion 28 is provided. Thus it is a configuration in which the bottomof the guide hole 17 a and the face of the receptacle 40 supporting theair core coil 9 is on the same plane. This is another configuration inwhich the present invention can be implemented.

[0208] In this Embodiment 1, since the receptacle 40 is a step lowerthan the guide hole 17 a, the leading air core coil 9 moving ahead tothe receptacle 40 under vacuum suction drops into the receptacle 40 andis positioned as its fore end comes into contact with the stopperportion 28. This causes the leading air core coil 9 to separate from thefollowing air core coil 9.

[0209] The slider 26 is structured as a frame, and a shutter 31 isfitted spanning inside this frame and over the top face of this slider26. Between the portion of the shutter within the frame of the slider 26and the slider is a spring 42, whose elasticity is utilized to keep theshutter 31 pressed toward the edge of the guide hole 17 a all the time.

[0210] The portion of the shutter 31 toward its left end blocks the topside of the tip of the guide hole 17 a. Therefore, when the shutter 31moves rightwards (ahead), a number of air core coils 9 towards the tipof the guide hole 17 a are exposed and, depending on the length of theirforward motion, the air core coil 9 (the leading air core coil 9) on thereceptacle 40 of the slider 26 may also be exposed.

[0211] Vacuum suction passages 30 b, 30 c, 30 d and 30 e are alsoprovided in the shutter 31 and the conveyor rail body 25. The vacuumsuction passage 30 d is a hole having a round section, and a sphere 43rolling on the concave bottom of the conveyor rail body 25 can enter andblock this hole, i.e. the vacuum suction passage 30 d. As shown in FIG.18 and FIG. 19, when the shutter 31 recedes and comes closest to theleft end, a sphere controlling face 44 provided on the shutter 31 causesthe sphere 43 to move leftwards (back), with the result that the sphere43 comes off the hole and vacuum suction takes place. The thick arrowsin the figures indicate the flow of air for vacuum suction.

[0212] As shown in FIG. 20 and FIG. 21, when the shutter 31 movesrightwards (ahead) by 0.5 St, the sphere controlling face 44 comesrightwards off the hole, with the result that the sphere 43 is moved bythe vacuum suction force to partly enter the hole, blocks the vacuumsuction passage 30 d, and stops the vacuum sucking action. When thevacuum sucking action stops, the adhesive force between the air corecoils 9 due to the vacuum suction is eliminated. Incidentally, thevacuum suction passage 30 e communicates with the pipe 35 of the vacuumsuction mechanism, and the vacuum suction also aligns the following aircore coil 9 in the guide hole 17.

[0213] Next will be described the method by which air core coils 9 arefed in this bulk feed section 12. In the state in which air core coils 9begin to be fed, both the slider 26 and the shutter 31 are recessedleftwards as shown in FIG. 18 and its enlarged version, FIG. 19. In thisstate, vacuum suction is performed as indicated by thick arrows, and theair core coils 9 in the guide hole 17 a are aligned in tandem, with theleading air core coil 9 being in contact with the stopper portion 28. Inthese drawings, and in other illustrations too, three leading air corecoils 9 will be shown. The leading air core coil 9 enters the receptacle40 and, as shown in FIG. 19, the leading air core coil 9 and thefollowing air core coil 9 are freed from intertwisting with each other.

[0214] Next, as indicated by arrows in FIG. 20 and its enlarged version,FIG. 21, the shutter 31 proceeds rightwards to stop vacuum suction. Theproceeding length for this vacuum suction stopping is about half thelength of the air core coil 9, i.e. 0.5 St. As the shutter 31 movesahead, the sphere 43 is free from the control by the sphere controllingface 44, and turned by the vacuum suction force to block the vacuumsuction passage 30 d. In this process, the distance between the left endof the shutter 31 and the end of the conveyor rail body 25 part coveringthe guide hole 17 a, i.e. the opening end 46, becomes 0.5 St, and thepreviously hidden top side of the air core coil 9 is exposed. However,the leading air core coil 9 over the receptacle 40 is blocked by theshutter 31.

[0215] Next, as indicated by arrows in FIG. 22 and its enlarged version,FIG. 23, the slider 26 proceeds rightwards. This proceeding length isabout half the length of the air core coil 9, i.e. 0.5 St. The shutter31, as it is riding on the slider 26, also moves by 0.5 St, and thedistance between the left end of the shutter 31 and the end of theconveyor rail body 25 part covering the guide hole 17 a, i.e. theopening end 46, becomes 1 St. Even though the slider 26 moves, theleading air core coil 9 proceeds by a distance of an independentcarriage as vacuum suction is stopped, and the following (second) aircore coil 9 remains as it is in the guide hole 17 a. This completelyseparates the leading air core coil 9 and the following air core coil 9from each other. Also in this state, the leading air core coil 9 overthe receptacle 40 is blocked by the shutter 31.

[0216] Then, as indicated by arrows in FIG. 24 and its enlarged version,FIG. 25, the shutter 31 moves ahead. The purpose of this forward motionis to expose the leading air core coil 9 over the receptacle 40 blockedby the shutter 31, and the distance between the left end of the shutter31 and the opening end 46 after the forward motion may be, though notparticularly limited to, 3 St.

[0217] In this state, the collet 32 comes to hold the air core coil 9over the receptacle 40 by vacuum suction. In this case, since the aircore coil 9 is intertwisted with no other air core coil 9, it isaccurately and securely held by the collet 32. The collet 32, as shownin FIG. 11 and FIGS. 12(a) through 12(c), carries and feeds the air corecoil 9 over the module substrate 5.

[0218]FIG. 26 and FIG. 27 show the air core coil 9 of another structurein a state of being mounted over the module substrate 5 by the bulkfeeder of this Embodiment 1, and this mounted air core coil 9 is shownin FIG. 28 through FIG. 30. As shown in FIG. 29, this air core coil 9 isproduced by spirally winding a copper wire 47 whose surface is partlycovered with an insulating film 48 of polyethylene or the like so thatthe winds be in contact with each other. As shown in FIG. 30, thediameter a of the copper wire 47 is, for instance, 0.1 mm and the bore dof the coil, for instance, 0.3 mm. As a result, the maximum diameter Dof the coil is, for instance, 0.56 mm. The protruding length α of theends of the coil from, the maximum diameter D of the coil ranges fromabout 0 through 30 μm. Further, as shown in FIG. 29, the (overall)length of the air core coil 9 is about 0.8 mm.

[0219] In this air core coil 9, three winds constitute an inductorportion 22 and electrodes 23 at both ends consist of about two windseach. The inductance or the connection lengths of the electrodes can bevaried by altering the pertinent number of winds. FIGS. 31(a) and 31(b)respectively show the air core coils 9 of which the inductor portion 22consists of two winds and one wind.

[0220] This Embodiment 1 has the following advantages.

[0221] (1) The air core coil 9 is lower in D.C. resistance than a chipinductor. Therefore, when used as an inductor to be connected to thefinal amplifying stage of a multi-stage amplifying line, it cancontribute to reducing the D.C. loss and increasing the impedance. Forthis reason, the feedback of high frequency signals from the finalamplifying stage to the preceding amplifying stages can be reduced, andthe oscillation margin can be improved. A mobile telephone into which ahigh frequency power amplifying device of this Embodiment 1, improved inoscillation margin, is ameliorated in speech communication performance.To cite an example of using the coil of this Embodiment 1, the output isenhanced by +0.1 dB and the power efficiency, by about +1%, while theloss on the power supply line can be reduced by 0.1 dB.

[0222] (2) Since the source voltage fed to two amplifying lines in thedual band configuration is in crossed connection, the feedback of leaksignals to the first amplifying stage from subsequent amplifying stages(especially the final amplifying stage) via the power supply line can besuppressed, and accordingly the oscillation margin can be improved. Theoscillation margin is further improved by the use of the air core coilstated in (1) above.

[0223] (3) Since the air core coil 9 is configured by spirally anddensely winding the copper wire 47 whose surface is covered with theinsulating film 48, its manufacturing cost is very low, from about{fraction (1/7)} to ½ of that of a conventional chip inductor.Accordingly, the cost can be reduced to {fraction (1/7)} compared withthe expensive chip inductor connected to the final amplifying stage. Ifchip inductors used in other parts are replaced with air core coilsaccording to the invention, the cost can be reduced to ½. This canresult in a corresponding reduction in the cost of the high frequencypower amplifying device. Therefore, the manufacturing cost of a mobiletelephone (wireless communication device) into which this high frequencypower amplifying device is incorporated can be reduced likewise.

[0224] (4) As the air core coil 9 measures about 0.56 mm in maximumouter diameter and 0.9 mm in length, its packaged length is shorter thanthat of the chip inductor of 0.5 mm in width and height and 1 mm inlength.

[0225] (5) Mounting of the air core coil 9 using the bulk feeder 21 inthe manufacture of the high frequency power amplifying device has thefollowing advantages.

[0226] {circle over (1)} Among the electronic components to be mountedover the module substrate 5, the air core coil 9, which is the tallest,is packaged after the mounting of the other electronic components.Therefore, the collet 32 which holds the air core coil 9 by vacuumsuction comes into contact with none of the electronic componentsalready mounted over the module substrate 5, and can have no adverseeffect on the mounting of these other electronic components, resultingin an enhanced packaging yield.

[0227] {circle over (2)} The leading one of the air core coils 9transferred to the bulk feed section 12 of the bulk feeder 21 andaligned in tandem, after being held by the collet 32 by vacuum suction,is carried to a prescribed position over the module substrate 5,followed by melting of the solder 24 provided in advance on the modulesubstrate 5 and the air core coil 9 by temporary heating, no faultyholding by the collet 32 by vacuum suction, which could be caused bycatching of the following air core coil 9 by the leading air core coil9, can occur because the leading air core coil 9 is fed separated fromthe following air core coil 9 in the bulk feed section, resulting inaccurate and secure packaging and in efficient mounting operation.Therefore, faulty mounting or machinery stop can scarcely occur, makingpossible a reduction in mounting cost.

[0228] {circle over (3)} In the hopper portion, as the wall thickness ofthe cylindrical feed shaft 18 is thinner, there is no possibility of anyair core coil 9 (fed in bulk) to ride on the upper end of the feed shaft18 and to stop it, resulting in steady feeing of air core coils 9 to thebulk feed section.

[0229] {circle over (4)} In the hopper portion, the positionalrelationship is such that, in a state in which the guide 16 is at itslowest, there can arise no gap between the outer circumference of thefeed shaft 18 and the frustum concave 15 of the guide 16 in which thebulk could be caught, with the result that no air core coil 9 can becaught between the outer circumference of the feed shaft 18 and thefrustum concave 15 of the guide 16. Therefore, the air core coils 9 canbe prevented from deformation, and no deformed air core coil 9, if any,can be packaged, making possible an enhanced packaging yield. It is alsomade possible to stably feed air core coils 9 to the bulk feed section.

[0230] {circle over (5)} As the guide hole 17 of the feed shaft 18 has alarge round section, no air core coil 9 can clog the guide hole 17,making it possible to stably feed air core coils 9 to the bulk feedsection.

[0231] {circle over (6)} As the conveyor rail 13 is formed of a singleseamless member, no air core coil 9 can be caught on the way of theguide hole 17 a, making it possible to stably feed air core coils 9 tothe bulk feed section.

[0232] {circle over (7)} Since the leading air core coil 9 moving in theguide hole 17 a enters the receptacle 40 of the slider 26 in the bulkfeed section 12 of the bulk feeder 21 and, after the slider 26 operatesto separate the leading air core coil 9 from the following air core coil9, the shutter 31 opens to ready the leading air core coil 9 forfeeding, the leading air core coil 9 is accurately and securely held bythe collet 32 by vacuum suction. Therefore, air core coils 9 can beaccurately and securely mounted (package).

[0233] {circle over (8)} The advantages stated in {circle over (1)}through {circle over (7)} above make it possible for electroniccomponents including air core coils 9 to be stably mounted by using thebulk feeder 21 and so forth of this Embodiment 1.

[0234] (6) It is possible to provide a high frequency power amplifyingdevice (hybrid integrated circuit device) excelling in high frequencycharacteristics, enabling the output and efficiency to be enhanced andthe manufacturing cost to be reduced, and a mobile telephone (electronicdevice) into which this high frequency power amplifying device (hybridintegrated circuit device) is incorporated can be provided. Also, as thehigh frequency power amplifying device is improved in oscillationmargin, the speech communication performance of the mobile telephone isameliorated.

[0235] (7) It is possible to provide a high frequency power amplifyingdevice (hybrid integrated circuit device) into which air core coilslower in D.C. resistance are packaged and a mobile telephone (electronicdevice) into which this high frequency power amplifying device (hybridintegrated circuit device) is incorporated.

[0236] (8) It is possible to provide a bulk feeder 21 capable ofpackaging air core coils 9 or the like in bulk over a wiring boardaccurately and securely.

[0237] To add, the bulk feeder according to the invention is also ableto feed other items than air core coils, which would be otherwise liableto be intertwisted between units being transferred as air core coilswould be. Obviously it can also feed chip components such as chipresistors and chip capacitors.

[0238] (Embodiment 2)

[0239]FIG. 32 shows a partial typical view of part of the bulk feeder21, which is another preferred embodiment of the invention (Embodiment2). As shown in FIG. 32, there is provided an air feed path 49communicating with the pipe 35. This air feed path 49 communicates tothe guide hole 17 of the feed shaft 18 and, as shown in FIG. 32, blowsair into guide hole 17. This enables any clogging of the guide hole 17with an air core coil 9 to be easily eliminated.

[0240] (Embodiment 3)

[0241]FIG. 45 through FIG. 54 pertain to the manufacture of a highfrequency power amplifying module, which is another preferred embodimentof the invention (Embodiment 3).

[0242] This Embodiment 3 concerns a technique by which coils (air corecoils) can be mounted over a module substrate without deviation inpositioning.

[0243] In mounting an air core coil, electrodes at the both ends of theair core coil are superposed over electrode fixing pads on the modulesubstrate, followed by fixing of the electrode portions onto theelectrode fixing pads by reflowing solder applied in advance over thesurfaces of the electrode fixing pads. It was found that, in this fixingprocess, there might occur a faulty phenomenon that the air core coil 9deviates from its due position as shown in FIG. 52(c). Even if theelectrodes 23 of the air core coil 9 are correctly superposed over theelectrode fixing pads 4 b provided on the surface of the modulesubstrate 5, positional deviation may occur during the subsequentreflowing process, resulting in the deviation of the electrodes 23 fromthe electrode fixing pads 4 b as shown in FIG. 52(c). Coils whosedeviation is equal to or more than ⅓ of the coil diameter account for asmany as 7% of the total. Of this air core coil 9, two winds at each endconstitute an electrode 23 and the winds in-between make up the inductorportion 22 whose surface is covered with an insulator.

[0244] Reflowing of the solder 24 (dotted parts) is accomplished byusing a reflowing furnace shown in FIG. 53 and FIG. 54. This reflowingfurnace has a structure in which five heating tables (heat blocks) 70 athrough 70 e for mounting the object of heating are arranged in a row.

[0245] On one side of the row of heat blocks is arranged a linking arm72 of a transfer mechanism, which is partly shown in the drawing. Thislinking arm 72, as indicated by a group of arrows in FIG. 53, moves in arectangle formed by downward, right forward, upward and left backwarddirections.

[0246] Further, as shown in FIG. 54, arms 73 protrude from the innerside of the linking arm 72 to match the heat blocks, and two transferclaws 74 protrude downwards from each of these arms 73.

[0247] Therefore, the rectangular movement of the linking arm 72 causesthe object of heating, i.e. the module substrate 5, over the heat blocks70 a through 70 e to be transferred by one pitch at a time. The feedingof the module substrate 5 to the first heat block 70 a is accomplishedby a loader (not shown) From the final heat block 70 e, the modulesubstrate 5 is discharged by the transfer claws 74 to an unloadersection.

[0248] In the heat blocks 70 a through 70 e, the first three heat blocks70 a through 70 c are heat blocks for preheating, whose heatingtemperature successively rises, for instance, from 70° C. to 130° C. and195° C. The fourth heat block 70 d is for regular heating, and ismaintained, for instance, at 275° C. to be able to melt the solder 24(Pd—SnSb) having a melting point of 238° C. The final heat block 70 e isfor post heating, kept, for instance, at 150° C. to gradually cool themodule substrate 5 consisting of a ceramic wiring board.

[0249] Therefore, the module substrate 5 sequentially moved by thetransfer claws 74 from one to another of zones each consisting of a heatblock is successively raised in temperature, and undergoes solderreflowing over the fourth zone, i.e. the fourth heat block 70 d forregular heating.

[0250] It was found, however, that such a reflowing process caused theelectrodes 23 of the air core coil 9, formed of a copper wire, to beoxidized by the heating, the wetting performance of the solder todeteriorate, and the surface tension of the solder to repel the coil toinvite positional deviation. Thus, as shown in FIG. 52(a), when theelectrodes 23 of the air core coil 9 are superposed over the electrodefixing pads (lands) 4 b of the module substrate 5 and then subjected toreflowing, those whose surfaces are oxidized become more difficult to bewetted by the molten and swollen solder as shown in FIG. 52(b). Theelectrodes 23 are instead repelled by the solder, and the air core coil9 rolls down as if falling on a slope, resulting in the positionaldeviation shown in FIG. 52(c).

[0251] In view of this finding, the present inventor patterned theelectrode fixing pads 4 b provided on the surface of the modulesubstrate 5 in a U shape as shown in FIG. 45, so that the cylindricalair core coil 9 may not roll.

[0252] The high frequency power amplifying module of this Embodiment 3differs from the high frequency power amplifying module of Embodiment 1only in the pattern of the electrode fixing pads 4 b for fixing theelectrodes 23 of the air core coil 9, but the same as Embodiment 1 inother respects. FIG. 46 shows a plan of part of the high frequency poweramplifying module of this Embodiment 3.

[0253] Further, FIG. 47 show the mounted state of the coil in thisEmbodiment 3. FIG. 47(a) is a typical plan showing the oppositearrangement of the U-patterned electrode fixing pads 4 b, over which theelectrodes 23 at the both ends of the air core coil 9 are fixed with thesolder 24 (dotted parts in the drawing). FIG. 47(b) shows a profile andFIG. 47(c), a section.

[0254] It might be relevant here to describe the structure of mountingthe air core coil, which serves as an inductor. Over the main face ofthe module substrate 5 are formed a plurality of wiring lines. Themodule substrate 5 also has the electrode fixing pads 4 b connected tothose wiring lines and electrically connected to the electrodes 23 ofthe air core coil 9. Since there are two electrode fixing pads 4 b, onemay also be called a first electrode, and the other, a second electrode.

[0255] Each of the first and second electrodes has, in a planar view, apattern comprising a first portion 4×extending in a first direction, asecond portion 4 y 1 extending from one end of the first portion 4×in adirection substantially perpendicular to the first direction, and athird portion 4 y 2 extending from the other end of the first portion4×in the second direction as shown in FIG. 47(a). Of the pair ofelectrode fixing pads 4 b for fixing a single air core coil 9, the firstand the second electrodes are so arranged that the second and thirdportions of each electrode face each other.

[0256] The inductor, i.e. the air core coil 9, has a coiled shape formedby spirally winding a wire whose surface is covered with an insulatingfilm a plurality of rounds. The wire has at its two end portions exposedfrom the insulating film to constitute the electrodes 23. The spiralpart, whose surface is covered with the insulating film, of the wireconstitutes the inductor portion 22 while the two end portions make upthe electrodes 23. One of the electrodes 23 is soldered onto the firstelectrode, and the other of the electrodes 23, to the second electrode.

[0257] The second portion 4 y 1 and the third portion 4 y 2 of each ofthe first and second electrodes extend to the insulating film-coveredwire portions of the inductor. This arrangement ensures fixing of theelectrodes 23 to the electrode fixing pads 4 b with the solder 24.

[0258] Further, the second portion 4 y 1 and the third portion 4 y 2 ofeach of the first and second electrodes are separated in the firstdirection so that the air core coil 9 may not roll off.

[0259] Even if the structure is such that the second portion 4 y 1 andthe third portion 4 y 2 extend in parallel or form a prescribed angle toeach other, it can effectively prevent the air core coil 9 from rollingoff. In order to prevent the air core coil 9 from rolling off and invitepositional deviation, each of the electrode fixing pads 4 b may as wellbe configured of the second portion 4 y 1 and the third portion 4 y 2alone, with no first portion 4 x.

[0260] At the same time, the present inventor studied the dimensionaldependence of the U-shaped electrode fixing pads 4 b. The results of thestudy are shown in the graphs of FIG. 48 and FIG. 49. As shown in FIG.47(a), the lengths of the second portion 4 y 1 of the first electrodeand the second electrode are represented by A; the spacing between thefirst electrode and the second electrode, by B; the length of the secondportion 4 y 1 protruding from the first portion 4 x, by C; the length ofthe second portion 4 y 1 in the first direction, by E; and the spacingbetween the second portion 4 y 1 and the third portion 4 y 2, by D.

[0261] The graph of FIG. 48 shows the correlation among dimensions A andB and the rate of deviational fault when D is set to 0.30 mm and E, to0.15 mm. The graph represents cases in which dimension C is 0.05 mm (thecurve marked with ⋄), 0.10 mm (the curve marked with □), 0.15 mm (thecurve marked with Δ) or 0.20 mm (the curve marked with x). The curve of0.10 mm and that of 0.20 mm are identical with each other.

[0262] The graph reveals that, irrespective of dimension C, the rate offault is the lowest when dimension B is 0.40 mm and dimension A, 0.45mm, both approximately. Alternatively, when dimension C is 0.05 mm or0.15 mm, the deviational fault rate can be reduced to 0% when dimensionB is 0.40 mm and dimension A, 0.45 mm, both approximately.

[0263] The graph of FIG. 49 is a similar one to the foregoing, withdimension D set to 0.20 mm and dimension E, to 0.20 mm.

[0264]FIG. 50 is a three-dimensional diagram depicting the state inwhich solder applied to the mutually opposite first and secondelectrodes (U-shaped electrodes) over the module substrate is remelted.FIG. 51 shows a sectional view of the 1110 μm position (P) in FIG. 50.It is vividly seen that surface variations of the solder 24 follow theouter diameters of the electrodes 23 of the air core coil 9.

[0265] The positioning of the center of the coil between such twin peaksof the solder 24 prevents the air core coil 9 from rolling off becauseit is stopped by the peaks of the solder on both sides of the electrodes23 even if the electrodes 23 are subjected to the repelling force of thesurface tension of the solder, and accordingly the mounting position ofthe air core coil 9 can be prevented from deviation. The faulty mountingrate of the air core coil 9 in this Embodiment 3 can be restrained to 1%or less.

[0266] In this Embodiment 3, the air core coil 9 is mounted over themodule substrate 5 by using the reflowing furnace shown in FIG. 53 andFIG. 54. In these illustrations of the reflowing furnace, depiction ofthe air core coil 9 is dispensed with.

[0267] In the reflowing furnace, the module substrate 5 isintermittently fed over the heat blocks 70 a through 70 e by atransferring mechanism, and the air core coil 9 is reflow-mounted bypreheating and regular heating. For instance, the transfer time is 3seconds, and the module substrate 5 stays at halt over each heat blockfor 50 seconds. From the first through third zones, the heatingtemperature is successively raised, and in the fourth zone the solder 24is remelted by regular heating. In the fifth zone, the temperature isgradually lowered to prevent the module substrate 5 consisting of aceramic wiring board from being destroyed or damaged.

[0268] In this manner, satisfactory mounting of the air core coil 9 ismade possible, with the electrodes 23 being prevented from coming offthe electrode fixing pads 4 b as shown in FIG. 46 and FIG. 47(a).

[0269] (Embodiment 4)

[0270]FIG. 55 through FIG. 58 pertain to the manufacture of a highfrequency power amplifying module, which is another preferred embodimentof the present invention (Embodiment 4). FIG. 55 schematically shows atypical front view of a reflowing furnace; FIG. 56, a typical front viewof the reflowing furnace in a state in which reflowing is carried out ina nitrogen ambience; and FIG. 57, a typical sectional view of a state inwhich reflowing is carried out in the nitrogen ambience.

[0271] In this Embodiment 4, the electrode fixing pads 4 b for mountingthe electrodes 23 of the air core coil 9 are, as shown in FIG. 58,rectangular instead of being U-shaped. However, in order to prevent thesurface of the electrodes 23 of the air core coil 9 from being oxidizedby heating, the reflowing is carried out in an ambience of inert gas.For instance, nitrogen (N₂) gas is used as the inert gas.

[0272] For this reason, the reflowing furnace has, as shown in FIG. 55,inert gas supply boxes 75 capable of covering the module substrate 5from above so that the module substrate 5 can be placed in a nitrogenambience during the reflowing process except when the module substrate 5is being transferred. A number of such inert gas supply boxes 75 aremade ready to match the different zones, and are supported by a liftingarm 76. This lifting arm 76 is hollow inside, and has a configurationthat permits injection of nitrogen gas from the ceiling of each inertgas supply box 75. For greater mechanical strength, a separate nitrogengas supply pipe may be provided in addition to the lifting arm 76.

[0273] When the module substrate 5 is transferred by the transfer claws74, the lifting arm 76 is positioned upwards so that the arm and theclaws may not interfere with each other, and when the transfer claws 74is at halt at the left end, the arm comes down as shown in FIG. 56 andFIG. 57, and blows the nitrogen gas blown out of the hollow part of thelifting arm 76 against the main face of the module substrate 5. Theelectrodes 23 at the both ends of the air core coil 9 mounted over themain face of the module substrate 5 are fixed in the nitrogen gasambience with the solder 24 applied to the surfaces of the electrodefixing pads 4 b of the module substrate 5. For instance, the modulesubstrate 5 is transferred for 3 seconds, and is heated in the nitrogengas ambience for 50 seconds.

[0274] As a result, the copper surfaces of the electrodes 23 of the aircore coil 9 becomes hardly oxidizable. Therefore, as the electrodes 23are not repelled but wetted by the molten solder, the air core coil 9 isfixed to the electrode fixing pads 4 b without positional deviation.FIG. 58 shows a state in which the electrodes 23 of the air core coil 9are fixed to the electrode fixing pads 4 b by the solder 24. The aircore coil 9 is formed in 10 winds, of which six constitute the inductorportion 22 and two each, one or the other of the electrodes 23, thoughit is not limited to this configuration.

[0275] To add, though the bottom edges of the inert gas supply box 75may be in direct contact with either the upper faces of the heat blocksor the main face the module substrate 5, they partly need prescribedgaps 77 to let nitrogen gas leak out (see FIG. 57).

[0276] The faulty mounting rate of the air core coil 9 in thisEmbodiment 4 can be restrained to 1% or less.

[0277] Although the invention by the present inventor has been describedin specific terms with reference to the preferred embodiments thereof,it goes without saying that the invention is not limited to theseembodiments, but can be modified in various ways without deviating fromits essentials.

[0278] While the invention is applied to high frequency power amplifyingdevices of three-stage configurations in the foregoing embodiments, itcan be similarly applied to high frequency power amplifying devices ofother configurations. For instance, it can be applied with similaradvantages to a two-stage high frequency power amplifying moduleconsisting of the first stage semiconductor amplifying element and thefinal stage semiconductor amplifying element.

[0279] Although the foregoing description mainly referred to theapplication of the invention by the present inventor to a mobiletelephone, which is the background area of the intended utilization ofthe invention, the application is not limited to this area, but can aswell be applied to other electronic devices and other semiconductordevices (hybrid integrated circuit devices).

INDUSTRIAL APPLICABILITY

[0280] As hitherto described, the high frequency power amplifying devicepertaining to the present invention can be used as a power amplifier forvarious wireless communication devices including mobile communicationterminals, such as mobile telephones. The invention can also provide awireless communication device permitting stable speech communication.Furthermore, the invention can contribute to reducing the manufacturingcosts of high frequency power amplifying devices and wirelesscommunication devices by enhancing the manufacturing yields of highfrequency power amplifying modules and wireless communication devices.

1. A semiconductor device comprising: a module substrate having on itsmain face a plurality of wiring lines; and a plurality of electroniccomponents including an inductor mounted over said module substrate,wherein said inductor has a shape of a coil comprised of a wire whosesurface is covered with an insulating film and which is spirally woundin a plurality of rounds, wherein said wire has at its both ends partsexposed from said insulating film, and wherein the plurality of wiringlines of said module substrate are electrically connected in the partsof said wire exposed from said insulating film.
 2. The semiconductordevice according to claim 1, wherein said coil is formed by spirally anddensely winding a copper wire of about 0.1 mm in diameter to an innerdiameter of about 0.3 mm and its both ends constitute electrodes eachcomprised of one to a plurality of winds of copper wire where saidinsulating film is absent.
 3. A high frequency power amplifying devicecomprising: an input terminal; an output terminal; a source voltageterminal; and a plurality of amplifying stages connected in cascadebetween said input terminal and said output terminal and fed with asource voltage from said source voltage terminal, wherein one to all ofthe inductors electrically connected to said amplifying stages areconstituted of coils each comprised of a wire whose surface is coveredwith an insulating film, which is spirally wound, and whose both endsconstitute electrodes.
 4. The high frequency power amplifying deviceaccording to claim 3, wherein said coil is formed by spirally anddensely winding a copper wire of about 0.1 mm in diameter to an innerdiameter of about 0.3 mm and its both ends constitute electrodes eachcomprised of one to a plurality of winds of copper wire where saidinsulating film is absent.
 5. A high frequency power amplifying devicecomprising: an input terminal; an output terminal; a source voltageterminal; and a plurality of amplifying stages connected in cascadebetween said input terminal and said output terminal and fed with asource voltage from said source voltage terminal, wherein a coilcomprised of a wire whose surface is covered with an insulating film,which is spirally wound, and whose both ends constitute electrodes isconnected in series between the final amplifying stage and said sourcevoltage terminal.
 6. The high frequency power amplifying deviceaccording to claim 5, wherein said coil is formed by spirally anddensely winding a copper wire of about 0.1 mm in diameter to an innerdiameter of about 0.3 mm and its both ends constitute electrodes eachcomprised of one to a plurality of winds of copper wire where saidinsulating film is absent.
 7. A high frequency power amplifying devicehaving a plurality of amplifying lines, wherein each amplifying line hasa multi-stage configuration comprising a plurality of amplifying stagesconnected in cascade, and wherein a coil comprised of a wire whosesurface is covered with an insulating film, which is spirally wound, andwhose both ends constitute electrodes is connected in series between thefinal amplifying stage of each amplifying line and the source voltageterminal.
 8. The high frequency power amplifying device according toclaim 7, wherein said coil is formed by spirally and densely winding acopper wire of about 0.1 mm in diameter to an inner diameter of about0.3 mm and its both ends constitute electrodes each comprised of one toa plurality of winds of copper wire where said insulating film isabsent.
 9. A high frequency power amplifying device comprising: twoamplifying lines; input terminals of said amplifying lines; outputterminals of said amplifying lines; and two source voltage terminals,wherein each of said amplifying lines has a multi-stage configurationcomprising a plurality of amplifying stages connected in cascade,wherein one of said source voltage terminals is connected to the firstamplifying stage of one of said amplifying lines and to the remainingamplifying stages of the other of said amplifying lines, wherein theother of said source voltage terminals is connected to the firstamplifying stage of the latter amplifying line and to the remainingamplifying stages of the former amplifying line, and wherein a coilcomprised of a wire whose surface is covered with an insulating film,which is spirally wound, and whose both ends constitute electrodes isconnected in series between the final amplifying stage of each of saidamplifying lines and said source voltage terminal.
 10. The highfrequency power amplifying device according to claim 9, wherein saidcoil is formed by spirally and densely winding a copper wire of about0.1 mm in diameter to an inner diameter of about 0.3 mm and its bothends constitute electrodes each comprised of one to a plurality of windsof copper wire where said insulating film is absent.
 11. An electronicdevice formed by incorporating the semiconductor device according toclaim
 1. 12. A wireless communication device which has a high frequencypower amplifying device in its transmitter section and supplies theoutput of said high frequency power amplifying device to an antenna,wherein said high frequency power amplifying device comprises: an inputterminal, an output terminal, a source voltage terminal, and a pluralityof amplifying stages connected in cascade between said input terminaland said output terminal and fed with a source voltage from said sourcevoltage terminal, wherein one to all of the inductors electricallyconnected to said amplifying stages are constituted of coils eachcomprised of a wire whose surface is covered with an insulating film,which is spirally wound, and whose both ends constitute electrodes. 13.The wireless communication device according to claim 12, wherein saidcoil is formed by spirally and densely winding a copper wire of about0.1 mm in diameter to an inner diameter of about 0.3 mm and its bothends constitute electrodes each comprised of one to a plurality of windsof copper wire where said insulating film is absent.
 14. A wirelesscommunication device which has a high frequency power amplifying devicein its transmitter section and supplies the output of said highfrequency power amplifying device to an antenna, wherein said highfrequency power amplifying device comprises: an input terminal; anoutput terminal; a source voltage terminal; and a plurality ofamplifying stages connected in cascade between said input terminal andsaid output terminal and fed with a source voltage from said sourcevoltage terminal, wherein a coil comprised of a wire whose surface iscovered with an insulating film, which is spirally wound, and whose bothends constitute electrodes is connected in series between the finalamplifying stage and said source voltage terminal.
 15. The wirelesscommunication device according to claim 14, wherein said coil is formedby spirally and densely winding a copper wire of about 0.1 mm indiameter to an inner diameter of about 0.3 mm and its both endsconstitute electrodes each comprised of one to a plurality of winds ofcopper wire where said insulating film is absent.
 16. A wirelesscommunication device which has a high frequency power amplifying devicein its transmitter section and supplies the output of said highfrequency power amplifying device to an antenna, wherein said highfrequency power amplifying device includes: a plurality of amplifyinglines, wherein each amplifying line has a multi-stage configurationcomprising a plurality of amplifying stages connected in cascade, andwherein a coil comprised of a wire whose surface is covered with aninsulating film, which is spirally wound, and whose both ends constituteelectrodes is connected in series between the final amplifying stage ofeach amplifying line and the source voltage terminal.
 17. The wirelesscommunication device according to claim 16, wherein said coil is formedby spirally and densely winding a copper wire of about 0.1 mm indiameter to an inner diameter of about 0.3 mm and its both endsconstitute electrodes each comprised of one to a plurality of winds ofcopper wire where said insulating film is absent.
 18. A wirelesscommunication device which has a high frequency power amplifying devicein its transmitter section and supplies the output of said highfrequency power amplifying device to an antenna, wherein said highfrequency power amplifying device includes: two amplifying lines; inputterminals of said amplifying lines; output terminals of said amplifyinglines; and two source voltage terminals, wherein each of said amplifyinglines has a multi-stage configuration comprising a plurality ofamplifying stages connected in cascade, wherein one of said sourcevoltage terminals is connected to the first amplifying stage of one ofsaid amplifying lines and to the remaining amplifying stages of theother of said amplifying lines, wherein the other of said source voltageterminals is connected to the first amplifying stage of the latteramplifying line and to the remaining amplifying stages of the formeramplifying line, and wherein a coil comprised of a wire whose surface iscovered with an insulating film, which is spirally wound, and whose bothends constitute electrodes is connected in series between the finalamplifying stage of each of said amplifying lines and said sourcevoltage terminal.
 19. The wireless communication device according toclaim 18, wherein said coil is formed by spirally and densely winding acopper wire of about 0.1 mm in diameter to an inner diameter of about0.3 mm and its both ends constitute electrodes each comprised of one toa plurality of winds of copper wire where said insulating film isabsent.
 20. A semiconductor device manufacturing method of causing acollet to hold the leading one of electronic components aligned intandem and fed to the bulk feed section of a bulk feeder by vacuumsuction to be transferred to a module substrate, and fixing saidelectronic components to a module substrate by melting solder applied tosaid module substrate or the like in advance by subsequent reflowing,wherein the leading one of said electronic components fed in tandem isseparated from the following electronic components by a prescribedspacing, and said electronic component is held by said collet by vacuumsuction.
 21. The semiconductor device manufacturing method according toclaim 20, wherein said leading electronic component is separated fromthe following electronic components by advancing it by a prescribedspacing along its direction in tandem.
 22. The semiconductor devicemanufacturing method according to claim 20, wherein said leadingelectronic component is separated from the following electroniccomponents by moving it in a direction crossing that direction in tandemby a prescribed spacing.
 23. The semiconductor device manufacturingmethod according to claim 20, wherein said leading electronic componentis separated from the following electronic components by moving it aheadin that direction in tandem by a prescribed spacing after moving it in adirection crossing said direction in tandem by a prescribed spacing. 24.The semiconductor device manufacturing method according to claim 20,wherein coils whose surface is covered with an insulating film, eachformed by spirally and densely winding a wire and with its both endsconstituting electrodes, are fed to said bulk feed section as saidelectronic components.
 25. The semiconductor device manufacturing methodaccording to claim 20, wherein, before said coil is fixed to said modulesubstrate, other electronic components lower than said coil in packagingheight are fixed to said module substrate.
 26. The semiconductor devicemanufacturing method according to claim 20, wherein a high frequencypower amplifying device is manufactured by fixing to said modulesubstrate one to a plurality of semiconductor chips into whichsemiconductor amplifying elements are incorporated.
 27. A semiconductormanufacturing apparatus comprising a bulk accommodating case foraccommodating bulk, a hopper provided underneath said bulk accommodatingcase, a conveyor rail for guiding bulk taken in from said hopper, and abulk feed section formed in the tip part of said conveyor rail, whereinsaid hopper is comprised of a cylindrical guide having at its upper enda frustum concave for gathering said bulk to be accommodated in saidbulk accommodating case, and a feed shaft having a guide hole piercingsaid guide to guide one piece out of the bulk along the center axis,said guide being under vertical oscillation control relative to saidfeed shaft, and wherein said feed shaft is a cylinder of a thin wall sothat no piece out of said bulk may stably ride on its upper end.
 28. Thesemiconductor manufacturing apparatus according to claim 27, configuredto be capable of feeding coils of low electrical resistance, whosesurface is covered with an insulating film, each formed by spirally anddensely winding a wire and with its both ends constituting electrodes,to said bulk feed section as said bulk.
 29. A semiconductormanufacturing apparatus comprising: a bulk accommodating case foraccommodating bulk; a hopper provided underneath said bulk accommodatingcase; a conveyor rail for guiding bulk taken in from said hopper; and abulk feed section formed in the tip part of said conveyor rail, whereinsaid hopper is comprised of a cylindrical guide having at its upper enda frustum concave for gathering said bulk to be accommodated in saidbulk accommodating case, and a feed shaft having a guide hole piercingsaid guide to guide one piece out of the bulk along the center axis,said guide being under vertical oscillation control relative to saidfeed shaft, and wherein the relative vertical movement of said guide isin such a positional relationship that, in a state in which said guideis at its lowest, no gap can arise between the outer circumference ofsaid feed shaft and the frustum concave of said guide in which said bulkcould be caught.
 30. The semiconductor manufacturing apparatus accordingto claim 29, configured to be capable of feeding coils of low electricalresistance, whose surface is covered with an insulating film, eachformed by spirally and densely winding a wire and with its both endsconstituting electrodes, to said bulk feed section as said bulk.
 31. Asemiconductor manufacturing apparatus comprising: a bulk accommodatingcase for accommodating bulk; a hopper provided underneath said bulkaccommodating case; a conveyor rail for guiding bulk taken in from saidhopper; and a bulk feed section formed in the tip part of said conveyorrail, wherein said hopper is comprised of a cylindrical guide having atits upper end a frustum concave for gathering said bulk to beaccommodated in said bulk accommodating case, and a feed shaft having aguide hole piercing said guide to guide one piece out of the bulk alongthe center axis, said guide being under vertical oscillation controlrelative to said feed shaft, and wherein the guide hole of said feedshaft has a hole of a greater round section than said bulk so that theguide hole may not be clogged with said bulk.
 32. The semiconductormanufacturing apparatus according to claim 31, configured to be capableof feeding coils of low electrical resistance, whose surface is coveredwith an insulating film, each formed by spirally and densely winding awire and with its both ends constituting electrodes, to said bulk feedsection as said bulk.
 33. A semiconductor manufacturing apparatuscomprising: a bulk accommodating case for accommodating bulk; a hopperprovided underneath said bulk accommodating case; a conveyor rail forguiding bulk taken in from said hopper; and a bulk feed section formedin the tip part of said conveyor rail, wherein a conveyor rail memberfor forming the guide hole for guiding said bulk is comprised of asingle seamless member so that the bulk moving along said guide hole maynot be caught.
 34. The semiconductor manufacturing apparatus accordingto claim 33, configured to be capable of feeding coils of low electricalresistance, whose surface is covered with an insulating film, eachformed by spirally and densely winding a wire and with its both endsconstituting electrodes, to said bulk feed section as said bulk.
 35. Asemiconductor manufacturing apparatus comprising: a bulk accommodatingcase for accommodating bulk; a hopper provided underneath said bulkaccommodating case; a conveyor rail for guiding bulk taken in from saidhopper; a bulk feed section formed in the tip part of said conveyorrail; and a vacuum suction mechanism for transferring said bulk to saidbulk feed section through the guide hole, wherein said bulk feed sectionhas a stopper portion to position and stop the leading piece of bulkaligned in tandem and shifting in said guide hole of said conveyor rail,a slider having a receptacle to accept said leading piece of bulk andfitted to the conveyor rail to be able to reciprocate along the shiftingdirection of the bulk, and a shutter, fitted to said slider to be ableto reciprocate along the shifting direction of the bulk, for opening andclosing the top face of said guide hole, the configuration being suchthat, after said leading piece of bulk has entered said receptacle, saidvacuum suction is stopped, then said slider is moved by a prescribeddistance so that said leading piece of bulk be separated from thefollowing pieces of bulk, and said shutter is moved to expose saidleading piece of bulk over said receptacle to make it feedable.
 36. Thesemiconductor manufacturing apparatus according to claim 35, whereinsaid receptacle is provided on the extension of the guide hole.
 37. Thesemiconductor manufacturing apparatus according to claim 35, whereinsaid receptacle is one step lower than the bottom of the guide holethrough which said bulk is transferred.
 38. The semiconductormanufacturing apparatus according to claim 32, wherein said receptaclehas at its rear end a stub protruding toward the end of said bulkaccommodated in said receptacle.
 39. The semiconductor manufacturingapparatus according to claim 35, wherein the subjecting and release ofsaid bulk to and from vacuum suction are accomplished with a spherewhich is moved by the shifting of said shutter to open or block a vacuumsuction passage provided in the conveyor rail body.
 40. Thesemiconductor manufacturing apparatus according to claim 35, whereinsaid hopper is comprised of: a cylindrical guide having at its upper enda frustum concave for gathering said bulk to be accommodated in saidbulk accommodating case; and a feed shaft having a guide hole piercingsaid guide to guide the bulk aligned in tandem along the center axis,and is provided with an air supply path communicating with said guidehole, air being blown into said air supply path.
 41. A semiconductordevice comprising: a module substrate having on its main face aplurality of wiring lines, and a first electrode and a second electrodeelectrically connected to said plurality of wiring lines; and aplurality of electronic components including an inductor mounted oversaid module substrate, wherein said inductor has a shape of a coilcomprised of a wire whose surface is covered with an insulating film andwhich is spirally wound in a plurality of rounds, wherein said wire hasat its both ends parts exposed from said insulating film, each of saidfirst and second electrodes has, in a planar view, a first portionextending in a first direction, a second portion extending from one endof said first portion in a direction substantially perpendicular to saidfirst direction, and a third portion extending from the other end ofsaid first portion in said second direction, wherein said first andsecond electrodes are so arranged that the second and third portions ofeach electrode face each other, wherein said inductor is so arrangedthat its part exposed from said insulating film is positioned over saidfirst electrode and second electrode, wherein said inductor is joined tosaid first and second electrodes with solder, and wherein the second andthird portions of each of said first and second electrodes extend to thewire part of said inductor covered with the insulating film.
 42. Thesemiconductor device according to claim 41, wherein the second and thirdportions of each of said first and second electrodes are separated insaid first direction.
 43. The semiconductor device according to claim41, wherein said inductor is formed by spirally and densely winding acopper wire of about 0.1 mm in diameter to an inner diameter of about0.3 mm and its both ends constitute electrodes each comprised of one toa plurality of winds of copper wire where said insulating film isabsent.
 44. A high frequency power amplifying device comprising: aninput terminal; an output terminal; a source voltage terminal; and aplurality of amplifying stages connected in cascade between said inputterminal and said output terminal and fed with a source voltage fromsaid source voltage terminal, wherein one to all of the inductorselectrically connected to said amplifying stages are constituted ofcoils each comprised of a wire whose surface is covered with aninsulating film, which is spirally wound, and whose both ends constituteelectrodes, wherein said inductor is connected to a module substratehaving on its main face a plurality of wiring lines and a firstelectrode and a second electrode electrically connected to saidplurality of wiring lines, wherein each of said first and secondelectrodes has, in a planar view, a first portion extending in a firstdirection, a second portion extending from one end of said first portionin a direction substantially perpendicular to said first direction, anda third portion extending from the other end of said first portion insaid second direction, wherein said first and second electrodes are soarranged that the second and third portions of each electrode face eachother, wherein said inductor is so arranged that its part exposed fromsaid insulating film is positioned over said first electrode and secondelectrode, wherein said inductor is joined to said first and secondelectrodes with solder, and wherein the second and third portions ofeach of said first and second electrodes extend to the wire part of saidinductor covered with the insulating film.
 45. The semiconductor deviceaccording to claim 44, wherein said inductor is formed by spirally anddensely winding a copper wire of about 0.1 mm in diameter to an innerdiameter of about 0.3 mm and its both ends constitute electrodes eachcomprised of one to a plurality of winds of copper wire where saidinsulating film is absent.
 46. A high frequency power amplifying devicecomprising: an input terminal; an output terminal; a source voltageterminal; and a plurality of amplifying stages connected in cascadebetween said input terminal and said output terminal and fed with asource voltage from said source voltage terminal, wherein an inductor isconnected in series between the final amplifying stage and said sourcevoltage terminal, wherein said inductor is constituted of a coilcomprised of a wire whose surface is covered with an insulating film,which is spirally wound, and whose both ends constitute electrodes,wherein said inductor is connected to a module substrate having on itsmain face a plurality of wiring lines and a first electrode and a secondelectrode electrically connected to said plurality of wiring lines,wherein each of said first and second electrodes has, in a planar view,a first portion extending in a first direction, a second portionextending from one end of said first portion in a directionsubstantially perpendicular to said first direction, and a third portionextending from the other end of said first portion in said seconddirection, wherein said first and second electrodes are so arranged thatthe second and third portions of each electrode face each other, whereinsaid inductor is so arranged that its part exposed from said insulatingfilm is positioned over said first electrode and second electrode,wherein said inductor is joined to said first and second electrodes withsolder, and wherein the second and third portions of each of said firstand second electrodes extend to the wire part of said inductor coveredwith the insulating film.
 47. A high frequency power amplifying deviceincluding a plurality of amplifying lines, wherein each amplifying linehas a multi-stage configuration comprising a plurality of amplifyingstages connected in cascade, wherein an inductor is connected in seriesbetween the final amplifying stage of each of said amplifying lines anda source voltage terminal, wherein said inductor is constituted of acoil comprised of a wire whose surface is covered with an insulatingfilm, which is spirally wound, and whose both ends constituteelectrodes, wherein said inductor is connected to a module substratehaving on its main face a plurality of wiring lines and a firstelectrode and a second electrode electrically connected to saidplurality of wiring lines, wherein each of said first and secondelectrodes has, in a planar view, a first portion extending in a firstdirection, a second portion extending from one end of said first portionin a direction substantially perpendicular to said first direction, anda third portion extending from the other end of said first portion insaid second direction, wherein said first and second electrodes are soarranged that the second and third portions of each electrode face eachother, wherein said inductor is so arranged that its part exposed fromsaid insulating film is positioned over said first electrode and secondelectrode, wherein said inductor is joined to said first and secondelectrodes with solder, and wherein the second and third portions ofeach of said first and second electrodes extend to the wire part of saidinductor covered with the insulating film.
 48. A high frequency poweramplifying device comprising: two amplifying lines; input terminals ofsaid amplifying lines; output terminals of said amplifying lines; andtwo source voltage terminals, wherein each of said amplifying lines hasa multi-stage configuration comprising a plurality of amplifying stagesconnected in cascade, wherein one of said source voltage terminals isconnected to the first amplifying stage of one of said amplifying linesand to the remaining amplifying stages of the other of said amplifyinglines, wherein the other of said source voltage terminals is connectedto the first amplifying stage of the latter amplifying line and to theremaining amplifying stages of the former amplifying line, wherein aninductor is connected in series between the final amplifying stage ofeach of said amplifying lines and a source voltage terminal, whereinsaid inductor is constituted of a coil comprised of a wire whose surfaceis covered with an insulating film, which is spirally wound, and whoseboth ends constitute electrodes, wherein said inductor is connected to amodule substrate having on its main face a plurality of wiring lines anda first electrode and a second electrode electrically connected to saidplurality of wiring lines, wherein each of said first and secondelectrodes has, in a planar view, a first portion extending in a firstdirection, a second portion extending from one end of said first portionin a direction substantially perpendicular to said first direction, anda third portion extending from the other end of said first portion insaid second direction, wherein said first and second electrodes are soarranged that the second and third portions of each electrode face eachother, wherein said inductor is so arranged that its part exposed fromsaid insulating film is positioned over said first electrode and secondelectrode, wherein said inductor is joined to said first and secondelectrodes with solder, and wherein the second and third portions ofeach of said first and second electrodes extend to the wire part of saidinductor covered with the insulating film.
 49. A wireless communicationdevice which has a high frequency power amplifying device in itstransmitter section and supplies the output of said high frequency poweramplifying device to an antenna, wherein said high frequency poweramplifying device comprises: an input terminal; an output terminal; asource voltage terminal; and a plurality of amplifying stages connectedin cascade between said input terminal and said output terminal and fedwith a source voltage from said source voltage terminal, wherein one toall of the inductors electrically connected to said amplifying stagesare constituted of coils each comprised of a wire whose surface iscovered with an insulating film, which is spirally wound, and whose bothends constitute electrodes, wherein said inductor is connected to amodule substrate having on its main face a plurality of wiring lines anda first electrode and a second electrode electrically connected to saidplurality of wiring lines, wherein each of said first and secondelectrodes has, in a planar view, a first portion extending in a firstdirection, a second portion extending from one end of said first portionin a direction substantially perpendicular to said first direction, anda third portion extending from the other end of said first portion insaid second direction, wherein said first and second electrodes are soarranged that the second and third portions of each electrode face eachother, wherein said inductor is so arranged that its part exposed fromsaid insulating film is positioned over said first electrode and secondelectrode, wherein said inductor is joined to said first and secondelectrodes with solder, and wherein the second and third portions ofeach of said first and second electrodes extend to the wire part of saidinductor covered with the insulating film.
 50. A wireless communicationdevice which has a high frequency power amplifying device in itstransmitter section and supplies the output of said high frequency poweramplifying device to an antenna, wherein said high frequency poweramplifying device comprises: an input terminal; an output terminal; asource voltage terminal; and a plurality of amplifying stages connectedin cascade between said input terminal and said output terminal and fedwith a source voltage from said source voltage terminal, wherein aninductor is connected in series between the final amplifying stage and asource voltage terminal, wherein said inductor is constituted of a coilcomprised of a wire whose surface is covered with an insulating film,which is spirally wound, and whose both ends constitute electrodes,wherein said inductor is connected to a module substrate having on itsmain face a plurality of wiring lines and a first electrode and a secondelectrode electrically connected to said plurality of wiring lines,wherein each of said first and second electrodes has, in a planar view,a first portion extending in a first direction, a second portionextending from one end of said first portion in a directionsubstantially perpendicular to said first direction, and a third portionextending from the other end of said first portion in said seconddirection, wherein said first and second electrodes are so arranged thatthe second and third portions of each electrode face each other, whereinsaid inductor is so arranged that its part exposed from said insulatingfilm is positioned over said first electrode and second electrode,wherein said inductor is joined to said first and second electrodes withsolder, and wherein the second and third portions of each of said firstand second electrodes extend to the wire part of said inductor coveredwith the insulating film.
 51. A wireless communication device which hasa high frequency power amplifying device in its transmitter section andsupplies the output of said high frequency power amplifying device to anantenna, said high frequency power amplifying device comprises: aplurality of amplifying lines, wherein each amplifying line has amulti-stage configuration comprising a plurality of amplifying stagesconnected in cascade, wherein an inductor is connected in series betweenthe final amplifying stage of each amplifying line and a source voltageterminal, wherein said inductor is constituted of a coil comprised of awire whose surface is covered with an insulating film, which is spirallywound, and whose both ends constitute electrodes, wherein said inductoris connected to a module substrate having on its main face a pluralityof wiring lines and a first electrode and a second electrodeelectrically connected to said plurality of wiring lines, wherein eachof said first and second electrodes has, in a planar view, a firstportion extending in a first direction, a second portion extending fromone end of said first portion in a direction substantially perpendicularto said first direction, and a third portion extending from the otherend of said first portion in said second direction, wherein said firstand second electrodes are so arranged that the second and third portionsof each electrode face each other, wherein said inductor is so arrangedthat its part exposed from said insulating film is positioned over saidfirst electrode and second electrode, wherein said inductor is joined tosaid first and second electrodes with solder, and wherein the second andthird portions of each of said first and second electrodes extend to thewire part of said inductor covered with the insulating film.
 52. Awireless communication device which has a high frequency poweramplifying device in its transmitter section and supplies the output ofsaid high frequency power amplifying device to an antenna, wherein saidhigh frequency power amplifying device comprises: two amplifying lines;input terminals of said amplifying lines; output terminals of saidamplifying lines; and two source voltage terminals, wherein each of saidamplifying lines has a multi-stage configuration comprising a pluralityof amplifying stages connected in cascade, wherein one of said sourcevoltage terminals is connected to the first amplifying stage of one ofsaid amplifying lines and to the remaining amplifying stages of theother of said amplifying lines, wherein the other of said source voltageterminals is connected to the first amplifying stage of the latteramplifying line and to the remaining amplifying stages of the formeramplifying line, wherein an inductor is connected in series between thefinal amplifying stage of each of said amplifying lines and a sourcevoltage terminal, wherein said inductor is constituted of a coilcomprised of a wire whose surface is covered with an insulating film,which is spirally wound, and whose both ends constitute electrodes,wherein said inductor is connected to a module substrate having on itsmain face a plurality of wiring lines and a first electrode and a secondelectrode electrically connected to said plurality of wiring lines,wherein each of said first and second electrodes has, in a planar view,a first portion extending in a first direction, a second portionextending from one end of said first portion in a directionsubstantially perpendicular to said first direction, and a third portionextending from the other end of said first portion in said seconddirection, wherein said first and second electrodes are so arranged thatthe second and third portions of each electrode face each other, whereinsaid inductor is so arranged that its part exposed from said insulatingfilm is positioned over said first electrode and second electrode,wherein said inductor is joined to said first and second electrodes withsolder, and wherein the second and third portions of each of said firstand second electrodes extend to the wire part of said inductor coveredwith the insulating film.